S
Sang-min Lee
Researcher at Samsung
Publications - 9
Citations - 795
Sang-min Lee is an academic researcher from Samsung. The author has contributed to research in topics: Layer (electronics) & Capacitor. The author has an hindex of 8, co-authored 9 publications receiving 795 citations.
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Patent
Method for manufacturing thin film using atomic layer deposition
TL;DR: In this article, a thin film manufacturing method is provided, which includes the step of chemically adsorbing a first reactant on a substrate by injecting the first reactants into a chamber in which the substrate is loaded, and the second reactant is removed by purging or pumping the chamber.
Patent
Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature
TL;DR: In this article, the first dielectric layer, an electrically insulating layer, and an aluminum oxide buffer layer formed by atomic layer deposition (ALD) and stabilized by heat treatment at a temperature of less than about 600°C, are provided.
Patent
Capacitor for a semiconductor device and method for forming the same
TL;DR: In this paper, a capacitor having high capacitance using a silicon-containing conductive layer as a storage node, and a method for forming the same, is provided, where the capacitor includes an amorphous Al2O3 dielectric layer and a plate node.
Patent
Method for forming a capacitor of a semiconductor device
TL;DR: In this article, a capacitor having high capacitance using a silicon-containing conductive layer as a storage node, and a method for forming the same, is provided, where the capacitor includes an amorphous Al2O3 dielectric layer and a plate node.
Patent
Production of thin film using atom-layer vapor deposition
TL;DR: In this article, a method for producing a thin film capable of obtaining an excellent stoichiometric thin film high in density by an atom-layer vapor deposition was proposed. But this method requires a large number of atoms to be injected into a chamber, and the chamber must be purged or pumped to remove the first reactant phisorbed on the chemisorbbed first reaction, and then the second reactant is again injected into the chamber and chemically adsorbed to the substrate surface to densify the first reaction.