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Sangchul Lee

Researcher at Gwangju Institute of Science and Technology

Publications -  45
Citations -  2547

Sangchul Lee is an academic researcher from Gwangju Institute of Science and Technology. The author has contributed to research in topics: Graphene & Graphene nanoribbons. The author has an hindex of 21, co-authored 45 publications receiving 2277 citations. Previous affiliations of Sangchul Lee include Stevens Institute of Technology.

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Charge-transfer-based gas sensing using atomic-layer MoS2.

TL;DR: A high-performance gas sensor constructed using atomic-layered MoS2 synthesised by chemical vapour deposition (CVD) was developed and the in situ PL characterisation of the changes in the peaks corresponding to charged trions and neutral excitons via gas adsorption processes was used to elucidate the mechanisms of charge transfer between theMoS2 and the gas molecules.
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The application of graphene as electrodes in electrical and optical devices

TL;DR: Several applications of graphene films as electrodes in electrical and optical devices are reviewed and the essential requirements are discussed, which include low sheet resistance, high optical transparency and excellent mechanical properties.
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Large-scale patterned multi-layer graphene films as transparent conducting electrodes for GaN light-emitting diodes.

TL;DR: This work demonstrates a large-scale batch fabrication of GaN light-emitting diodes (LEDs) with patterned multi-layer graphene (MLG) as transparent conducting electrodes as a potential development toward future practical application of graphene electrodes in optoelectronic devices.
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Bifunctional Sensing Characteristics of Chemical Vapor Deposition Synthesized Atomic-Layered MoS2

TL;DR: A bifunctional sensor within a single MoS2 device to detect photons and gas molecules in sequence is finally demonstrated, paving a way toward a versatile sensing platform for a futuristic multifunctional sensors.
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Flexible organic memory devices with multilayer graphene electrodes.

TL;DR: There was no substantial variation observed in the current levels of the WORM memory devices upon bending and bending cycling up to 10 000 times, and a retention time of over 10(4) s was observed without fluctuation under bending.