Showing papers by "Santiranjan Shannigrahi published in 2006"

A piezoelectric micro-actuator with a three-dimensional structure and its micro-fabrication

Abstract: Piezoelectric micro-actuators are promising for applications in various servo control systems, with the potential to provide ultra-precision positioning and compensation. In this paper, a micro-actuator, which is configured with an “H-shaped” cavity and a pair of high aspect ratio parallel beams, was designed. The micro-actuator with the three-dimensional structure is capable of providing in-plane flexibility and out-of-plane stiffness. Appropriate material processing and batch micro-fabrication schemes were developed to produce the piezoelectric micro-actuator prototypes, involving silicon micro machining, wafer-bonding and integration of piezoelectric thin films. The performance evaluation of the micro-actuator was also conducted. The results demonstrate that a combination of silicon micro-fabrication and piezoelectric thin film deposition is a viable approach to produce miniaturized piezoelectric devices with a complex structure.

Crystallization of sol-gel processed pzt films with low temperatures and short times using uv-assisted rapid thermal annealing

Abstract: Excimer UV-assisted rapid thermal annealing (UV-RTA) was employed to obtain the perovskite crystalline phase of Pb(Zr0.53Ti0.47)O3 (PZT) films processed from three different sols. Sol-I contained 2-methoxyethanol as the solvent and Pb-acetate, Zr-acetylacetonate, Ti-isopropoxide were the precursors for Pb, Zr, and Ti respectively. Sol-II contained acetic acid as the solvent and the corresponding precursors were Pb-acetate, Zr-propoxide and Ti-isopropoxide. Sol-III contained 1,3-propanediol as the solvent and the respective precursors were Pb-acetate, Zr-acetylacetonate, and Ti-diisopropoxide bis-acetylacetonate. It was observed that sol-III was the most sensitive to UV (222 nm) exposure at an intensity of ∼40 mW/cm2 and resulted single phase perovskite PZT films at an annealing temperature of 500°C by employing UV-RTA in compare to that of 550°C or more required for obtaining single phase perovskite films using the sol-I and II even under UV-irradiation. Moreover, the films obtained from the sol-...