Kui Yao

TL;DR: The photovoltaic effect in epitaxial BFO thin films is studied and an open-circuit voltage Voc of 0.3 V is obtained, demonstrating that photocurrent direction can be switched by the polarization direction of the BFO film and that the ferroelectric polarization is the main driving force of the observed photov Holtaic effect.

TL;DR: In this article, a new NIR-II fluorescent molecule with aggregation-induced-emission (AIE) characteristics is reported for orthotopic brain-tumor imaging.

TL;DR: In this paper, a non-volatile memory device in a graphene FET structure using ferroelectric gating is demonstrated, where the binary information is represented by the high and low resistance states of the working channels of the graphene working channels and is switched by controlling the polarization of the thin film using gate voltage sweep.

TL;DR: In this paper, photovoltaic effect in ferroelectric thin films with thickness below 100nm was investigated through both theoretical and experimental approaches Unprecedented high power conversion efficiency around ∼028% was achieved with epitaxial (Pb097La003) and Zr052Ti048)O3 O3 thin films, which is about 2 orders of magnitude higher than the reported in literature for ferroelectrics.

TL;DR: In this article, a nonvolatile memory device in a graphene field-effect transistor structure using ferroelectric gating is demonstrated, where the binary information, i.e., 1 and 0, is represented by the high and low resistance states of the working channels and is switched by controlling the polarization of the thin film using gate voltage sweep.