A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region.

Solid state image pickup device and camera

This book provides the reader with an understanding of what color is, where color comes from, and how color can be used correctly in many different applications. The authors first treat the physics of light and its interaction with matter at the atomic level, so that the origins of color can be appreciated. The intimate relationship between energy levels, orbital states, and electromagnetic waves helps to explain why diamonds shimmer, rubies are red, and the feathers of the Blue Jay are blue. Then, color theory is explained from its origin to the current state of the art, including image capture and display as well as the practical use of color in disciplines such as computer graphics, computer vision, photography, and film.

Color Imaging: Fundamentals and Applications

Avalanche photodiodes (APDs) operating in Geiger mode can detect weak optical signals at high speed The implementation of APD systems in a CMOS technology makes it possible to integrate the photodetector and its peripheral circuits on the same chip In this paper, we have fabricated APDs of different sizes and their driving circuits in a commercial 018-mum CMOS technology The APDs are theoretically analyzed, measured, and the results are interpreted Excellent breakdown performance is measured for the 10 and 20 m APDs at 102 V The APD system is compared to the previous implementations in standard CMOS Our APD has a 55% peak probability of detection of a photon at an excess bias of 2 V, and a 30 ns dead time, which is better than the previously reported results

Fully Integrated Single Photon Avalanche Diode Detector in Standard CMOS 0.18- $\mu$ m Technology

A solid state imaging device that includes a substrate having oppositely facing first and second surfaces and a photoelectric conversion unit layer having a light incident side facing away from the substrate. The substrate includes a first photoelectric conversion unit and a second photoelectric conversion and the photoelectric conversion layer includes a third photoelectric conversion unit.

Solid-state imaging device, method of manufacturing the same, and electronic apparatus

A large variety of solutions for widening the dynamic range (DR) of CMOS image sensors has been proposed throughout the years. We propose a set of criteria upon which an effective comparative analysis of the performance of wide-DR (WDR) sensors can be done. Sensors for WDR are divided into seven categories: 1) companding sensors; 2) multimode sensors; 3) clipping sensors; 4) frequency-based sensors; 5) time-to-saturation (time-to-first spike) sensors; 6) global-control-over-the-integration-time sensors; and 7) autonomous-control-over-the-integration-time sensors. The comparative analysis for each category is based upon the quantitative assessments of the following parameters: signal-to-noise ratio, DR extension, noise floor, minimal transistor count, and sensitivity. These parameters are assessed using consistent assumptions and definitions, which are common to all WDR sensor categories. The advantages and disadvantages of each category in the sense of power consumption and data rate are discussed qualitatively. The influence of technology advancements on the proposed set of criteria is discussed as well.

Wide-Dynamic-Range CMOS Image Sensors—Comparative Performance Analysis

The wide DR CMOS image sensor incorporates a lateral overflow capacitor in each pixel to integrate the overflow charges from the photodiode when it saturates. The 7.5/spl times/7.5 /spl mu/m/sup 2/ pixel, 1/3" VGA sensor fabricated in a 0.35 /spl mu/m 3M2P CMOS process achieves a 100 dB dynamic range with no image lag, 0.15 mV/sub rms/ random noise and 0.15 mV fixed pattern noise.

A 100 dB dynamic range CMOS image sensor using a lateral overflow integration capacitor

In a CMOS image sensor featuring a lateral overflow integration capacitor in a pixel, which integrates the overflowed charges from a fully depleted photodiode during the same exposure, the sensitivity in nonsaturated signal and the linearity in saturated overflow signal have been improved by introducing a new pixel circuit and its operation. The floating diffusion capacitance of the CMOS image sensor is as small as that of a four transistors type CMOS image sensor because the lateral overflow integration capacitor is located next to the reset switch. A 1/3-inch VGA format (640/sup H//spl times/480/sup V/ pixels), 7.5/spl times/7.5 /spl mu/m/sup 2/ pixel color CMOS image sensor fabricated through 0.35-/spl mu/m two-poly three-metal CMOS process results in a 100 dB dynamic range characteristic, with improved sensitivity and linearity.

A sensitivity and linearity improvement of a 100-dB dynamic range CMOS image sensor using a lateral overflow integration capacitor

A solid-state image pickup device and method are provided. The device can not only operate with a wide dynamic range but it also allows the user to switch the dynamic range corresponding to the photographic scene, and its operating method. Plural pixels, each of which has a photodiode, a transfer transistor, a floating diffusion region, an additional capacitance element, a capacitance coupling transistor, and a reset transistor, are integrated in an array on a semiconductor substrate. The capacitance of such floating diffusion region is less than that of such photodiode. A first signal S1 obtained by transferring part or all of the photoelectric charge accumulated in such photodiode PD to such floating diffusion region FD or a second signal S1+S2 obtained by transferring all of the photoelectric charge accumulated in such photodiodes to the potential obtained by coupling such floating diffusion region and such additional capacitance element CS is output to all of the pixels.

Solid-state image pickup device and method

A solid-state imaging device and an optical sensor, which can enhance a wide dynamic range while keeping a high sensitivity with a high S/N ratio, and a method of operating a solid-state imaging device for enhancing a wide dynamic range while keeping a high sensitivity with a high S/N ratio are disclosed. An array of integrated pixels has a structure wherein each pixel comprises a photodiode PD for receiving light and generating and accumulating photoelectric charges and a storage capacitor element CS coupled to the photodiode PD through a transfer transistor Tr1 for accumulating the photoelectric charges overflowing from the photodiode PD. The storage capacitor element CS is structured to accumulate the photoelectric charges overflowing from the photodiode PD in a storage-capacitor-element accumulation period TCS that is set to be a period at a predetermined ratio with respect to an accumulation period of the photodiode PD.

Solid-State Imaging Device, Optical Sensor and Method of Operating Solid-State Imaging Device

In a CMOS image sensor featuring a lateral overflow capacitor in a pixel, which integrates the overflowed charges from a frilly depleted photodiode during the same exposure, the sensitivity in non-saturated signal and the linearity in saturated overflow signal have been improved by introducing a new pixel circuit and its operation. A 1/3" VGA color CMOS image sensor has fabricated through 0.35 /spl mu/m 2P3M CMOS process results in a 100 dB dynamic range characteristic, with improved sensitivity and linearity.

Satoru Adachi

Papers

A 100 dB dynamic range CMOS image sensor using a lateral overflow integration capacitor

A sensitivity and linearity improvement of a 100-dB dynamic range CMOS image sensor using a lateral overflow integration capacitor

Solid-state image pickup device and method

Solid-State Imaging Device, Optical Sensor and Method of Operating Solid-State Imaging Device

A sensitivity and linearity improvement of a 100 dB dynamic range CMOS image sensor using a lateral overflow integration capacitor