A positive resist composition comprising: at least one compound selected from a compound capable of generating an acid represented by the formula (I) as defined herein upon irradiation with actinic rays or radiation and a compound capable of generating an acid represented by the following formula (II) upon irradiation with actinic rays or radiation; and a compound capable of generating an acid represented by the formula (III) as defined herein upon irradiation with actinic rays or radiation.

Positive resist composition and pattern-forming method using the same

A positive photosensitive composition comprises a compound capable of generating a specified sulfonic acid upon irradiation with one of an actinic ray and radiation and (B) a resin capable of decomposing under the action of an acid to increase the solubility in an alkali developer.

Positive photosensitive composition

A polymer obtained through copolymerization of a monomer having a hexafluoroalcohol pendant whose hydroxyl moiety has been protected and a monomer having an acid labile group is useful as an additive to a photoresist composition for immersion lithography. When processed by immersion lithography, the resist composition exhibits good water repellency and water slip and produces few development defects.

Polymer, resist composition and patterning process

Provided is a positive photoresist composition for use in the production of a semiconductor device, which ensures high resolution, reduced edge roughness of a line pattern and a small number of development defects. The positive photoresist composition comprises a resin having a specific silicon-containing group on the side chain, the solubility of which resin in an alkali developer increases under the action of an acid.

Positive photoresist composition

A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing an organic group having a hydroxyl group and having at least 3 fluorine atoms, in total, on a proximate carbon atom, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.

Resist composition and patterning process

A resist composition comprising as the base resin a blend of a fluorinated polymer which is sensitive to high-energy radiation and highly transparent at a wavelength of up to 200 nm and a sulfonate-containing polymer exhibiting a high contrast upon alkali dissolution is improved in transparency and alkali dissolution contrast as well as plasma etching resistance.

Resist compositions and patterning process

The present invention relates to a top coat composition, which is characterized in that it is applied to a photoresist top surface by using a polymer containing at least one structure represented by the formula [1], [2] or [3]. It is possible to produce a top coat composition solution by dissolving this top coat composition in an organic solvent. These top coat composition and top coat composition solution can be used in immersion lithography.

Top coat composition

PURPOSE: A resist material is provided which is sensitive to high energy beams, particularly excellent in sensitivity at 170 nm or less of wavelength and which has improved transparency of a resist and excellent plasma etching resistance. CONSTITUTION: The high polymer compound contains a group of the following formula 1 and has a weight average molecular weight of 1,000 to 500,000, where R1 to R3 are H, F or a straight chained, branched or ringed alkyl group or fluorinated alkyl group having 1 to 20 carbon atoms; each of the R2 and R3 is an alkylene group having 1 to 20 carbon atoms capable of containing hetero atom such as O, S or N in case that R2 and R3 are bonded together to form a ring; R4 and R5 are H or F; R6 and R7 are H, F or a straight chained, branched or ringed alkyl group or fluorinated alkyl group; at least one of R6 and R7 contains at least one or more F; each of the R6 and R7 is a straight chained, branched or ringed alkylene group or fluorinated alkylene group having 1 to 20 carbon atoms in case that R6 and R7 are bonded together to form a ring; and "a" is 0 or 1.

High molecular compound, resist material and pattern forming method

The present invention relates to a polymerizable monomer represented by the general formula (1), wherein R1 is a hydrogen atom, a halogen atom, a hydrocarbon group or a fluorine-containing alkyl group; R2 is a straight-chain or branched alkyl group, a cyclic alkyl group, an aromatic group, or a substituent having at least two of these groups, the R2 being optionally partially fluorinated; R3 is a hydrogen atom, a hydrocarbon group that is optionally branched, a fluorine-containing alkyl group, or a cyclic group having an aromatic or alicyclic structure, the R3 optionally containing a bond of an oxygen atom or carbonyl group; and n is an integer of 1-2.

Fluorine-containing polymerisable monomer and polymer prepared by using same

PROBLEM TO BE SOLVED: To provide (1) a polymer containing specific repeating units, to provide (2) a resist material containing the polymer as a base resin, and to provide (3) a method for forming a pattern with the resist material. SOLUTION: This polymer having a weight-average mol.wt. of 1,000 to 500,000 and containing repeating units represented by general formula (1) (R is H or CH3 ; R is H or a 1 to 8C alkyl; R is CO2 R ; R is a 1 to 15C alkyl or the alkyl between whose arbitrary carbon-carbon bond one or more oxygen atoms are inserted), and repeating units having a carboxylic acid protected with an acid-decomposable protecting group containing an adamantane structure or a tetracyclo[4.4.0.1 , .1 , ]dodecane structure. A resist material containing the polymer as a base resin senses high-energy rays, has excellent sensitivity, resolution and etching resistance, and is therefore useful for fine processing with electron beams or far ultraviolet light.

Satoru Miyazawa

Papers

Resist compositions and patterning process

Top coat composition

High molecular compound, resist material and pattern forming method

Fluorine-containing polymerisable monomer and polymer prepared by using same

Polymer, resist material, and method for forming pattern