S
Scott C. Blackstone
Researcher at RCA Corporation
Publications - 4
Citations - 148
Scott C. Blackstone is an academic researcher from RCA Corporation. The author has contributed to research in topics: Wafer & Monocrystalline silicon. The author has an hindex of 4, co-authored 4 publications receiving 148 citations.
Papers
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Patent
Method for growing monocrystalline silicon through mask layer
TL;DR: In this paper, a monocrystalline silicon layer is formed on a mask layer on a semiconductor substrate, and an epitaxial layer is then grown by a two-step deposition/etching cycle.
Patent
Method of forming closely spaced lines or contacts in semiconductor devices
TL;DR: In this paper, a method for forming closely spaced conductors suitable for use in CCD's and MESFETs is described utilizing an edge diffusion technique to convert exposed edge portions of a polycrystalline silicon layer to a non-etchable form.
Patent
Vertical IGFET with internal gate and method for making same
TL;DR: In this paper, a vertical IGFET with a source electrode on one major surface and a drain electrode on the opposite major surface is disclosed. And an insulated gate electrode which includes a conductive finger portion surrounded by an insulating layer is internally disposed in the silicon wafer such that a predetermined voltage applied to the gate electrode will regulate a current flow between the source and drain electrodes.
Patent
An IGFET and method for making an IGFET
TL;DR: In this paper, the authors use an epitaxial lateral overgrowth (ELO) technique for depositing a monocrystalline silicon layer over the insulated gate electrode, which is disposed on a silicon substrate.