Patent
Method for growing monocrystalline silicon through mask layer
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TLDR
In this paper, a monocrystalline silicon layer is formed on a mask layer on a semiconductor substrate, and an epitaxial layer is then grown by a two-step deposition/etching cycle.Abstract:
A monocrystalline silicon layer is formed on a mask layer on a semiconductor substrate. An apertured mask layer is disposed on the substrate, and an epitaxial layer is then grown by a two-step deposition/etching cycle. By repeating the deposition/etching cycle a predetermined number of times, monocrystalline silicon will be grown from the substrate surface, through the mask aperture, and over the mask layer.read more
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Patent
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References
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Journal ArticleDOI
A technique for producing epitaxial films on reuseable substrates
TL;DR: In this paper, a carbonized photoresist mask with narrow, widely spaced stripe openings is first deposited on a reusable GaAs substrate. Epitaxial growth initiated within the openings, followed by lateral growth over the mask, produces a continuous single-crystal GaAs film.
Journal ArticleDOI
Selective Epitaxial Deposition of Silicon
B. D. Joyce,J. A. Baldrey +1 more
TL;DR: In this paper, the hydrogen reduction of silicon tetrachloride at raised temperatures has been used for the deposition of silicon, and the rate of deposition is dependent on the total gas flow-rate, the molecular percentage of silicon TTR in the hydrogen and on the silicon substrate temperature.
Patent
Method of making integrated circuits utilizing ion implantation and selective epitaxial growth
Dale M. Brown,Kirby G. Vosburgh +1 more
TL;DR: In this article, a method of making an integrated circuit is described, which includes providing a substrate of single crystal silicon semiconductor material having low minority carrier lifetime, forming an insulating layer of silicon dioxide overlying a major surface of the substrate, forming a plurality of apertures in the insulating layers which expose selected portions of the major surface.
Patent
Method of making shaped epitaxial deposits
Don W. Shaw,Edward W Mehal +1 more
TL;DR: In this paper, it is shown that the first grown material is of opposite conductivity type to the substrate, or by filling the pockets with such material and then converting the central portions to the same type as the substrate by diffusion.
Patent
Process for the production of extremely flat silicon troughs by selective etching with subsequent rate controlled epitaxial refill
M. Druminski,Roland Gessner +1 more
TL;DR: In this paper, a method for the production of extremely flat silicon troughs in a silicon substrate for MOS-transistors is described, which is generally achieved by a localized etching process resulting in a slightly anisotropic trough characteristic and a subsequent rate controlled filling by a selection epitaxy process of said trough with a silicon material.