S
Seira Yamaguchi
Researcher at Japan Advanced Institute of Science and Technology
Publications - 25
Citations - 424
Seira Yamaguchi is an academic researcher from Japan Advanced Institute of Science and Technology. The author has contributed to research in topics: Potential induced degradation & Crystalline silicon. The author has an hindex of 9, co-authored 19 publications receiving 279 citations. Previous affiliations of Seira Yamaguchi include Toyota Technological Institute.
Papers
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Journal Article
Potential-induced degradation of Cu(In,Ga)Se
Seira Yamaguchi,Sachiko Jonai,Kohjiro Hara,Hironori Komaki,Yukiko Shimizu-Kamikawa,Hajime Shibata,Shigeru Niki,Yuji Kawakami,Atsushi Masuda +8 more
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Potential-induced degradation of Cu(In,Ga)Se2 photovoltaic modules
Seira Yamaguchi,Sachiko Jonai,Kohjiro Hara,Hironori Komaki,Yukiko Shimizu-Kamikawa,Hajime Shibata,Shigeru Niki,Yuji Kawakami,Atsushi Masuda +8 more
TL;DR: In this article, the potential-induced degradation of CIGS photovoltaic (PV) modules fabricated from integrated submodules is investigated by applying a voltage of −1000 V to connected sub-module interconnector ribbons at 85 °C.
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Changes in the current density–voltage and external quantum efficiency characteristics of n-type single-crystalline silicon photovoltaic modules with a rear-side emitter undergoing potential-induced degradation
TL;DR: In this paper, the potential-induced degradation (PID) of n-type single-crystalline silicon (sc-Si) photovoltaic (PV) modules with a rear-side emitter was addressed.
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Reduction in the short-circuit current density of silicon heterojunction photovoltaic modules subjected to potential-induced degradation tests
TL;DR: In this paper, potential-induced degradation (PID) of silicon heterojunction (SHJ) photovoltaic (PV) modules was investigated in the presence of ionomer encapsulants.
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Progression of rapid potential-induced degradation of n-type single-crystalline silicon photovoltaic modules
TL;DR: In this article, the progression of potential-induced degradation (PID) of photovoltaic modules using n-type single-crystalline silicon cells was addressed. And the authors proposed that these positive charges originate from positively charged K centers formed by extracting electrons from the K centers, which explains the rapid degradation and its saturation behavior.