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Seong-Ju Park
Researcher at Gwangju Institute of Science and Technology
Publications - 419
Citations - 15386
Seong-Ju Park is an academic researcher from Gwangju Institute of Science and Technology. The author has contributed to research in topics: Light-emitting diode & Ohmic contact. The author has an hindex of 58, co-authored 417 publications receiving 14725 citations. Previous affiliations of Seong-Ju Park include Purdue University & Wright State University.
Papers
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Journal ArticleDOI
High-Rate Dry Etching of ZnO in BCl3/CH4/H2 Plasmas
J. W. Bae,Chang Hyun Jeong,Han-Ki Kim,Kyoung-Kook Kim,Nam Gil Cho,Tae Yeon Seong,Seong-Ju Park,Ilesanmi Adesida,Geun Young Yeom +8 more
TL;DR: In this paper, high-rate dry etching characteristics of aluminum-doped zinc oxide (AZO) have been investigated in inductively coupled plasma (ICP) using BCl3/CH4/H2 plasma chemistry.
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MgxZn1-xO/Ag/MgxZn1-xO Multilayers As High-Performance Transparent Conductive Electrodes.
TL;DR: The results indicate that MgxZn1-xO/Ag/Mgx Zn 1-xN1-XO multilayers, which also show low surface roughness, can be used as highly conductive transparent electrodes in various optoelectronic devices operating over a wide wavelength region.
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Electroluminescence emission from light-emitting diode of p-ZnO/"InGaN/GaN… multiquantum well/n-GaN
Tae-Young Park,Yongseok Choi,Sang-Mook Kim,Gun Young Jung,Seong-Ju Park,Bong-Joon Kwon,Yong-Hoon Cho +6 more
TL;DR: In this article, the fabrication and characteristics of light-emitting diodes (LEDs) which consist of antimony (Sb) doped p-ZnO, (InGaN/GaN) multiquantum well (MQW), and n-GaN.
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Ni∕Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency
TL;DR: In this article, the effect of Ni∕Au metal contact on the carrier injection and the electroluminescence of silicon quantum dot light-emitting diodes (LEDs) was investigated.
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Halide formation and etching of Cu thin films with Cl2 and Br2
TL;DR: In this article, the authors examined the etch mechanisms of Cu thin films under the exposure of an argon ion beam and halogen molecules (Cl2, Br2) in a UHV system using a quartz crystal oscillator and x-ray photoelectron spectrometer.