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Sergey V. Lotkhov

Researcher at German National Metrology Institute

Publications -  67
Citations -  706

Sergey V. Lotkhov is an academic researcher from German National Metrology Institute. The author has contributed to research in topics: Josephson effect & Quantum tunnelling. The author has an hindex of 15, co-authored 66 publications receiving 681 citations.

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Operation of a three-junction single-electron pump with on-chip resistors

TL;DR: In this paper, the operation of a single-electron pump (comprising three Al/AlOx/Al tunnel junctions and two gates) connected to the bias electrodes through the compact on-chip Cr resistors was reported.
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Coulomb blockade and cotunneling in single electron circuits with on-chip resistors: towards the implementation of R-pump

TL;DR: In this article, a three-junction single-electron pump with on-chip resistors (R-pump) was proposed to solve the Coulomb blockade problem.
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Excitation of single quasiparticles in a small superconducting Al island connected to normal-metal leads by tunnel junctions.

TL;DR: This work investigates the dynamics of individual quasiparticle excitations on a small superconducting aluminum island connected to normal metallic leads by tunnel junctions and finds the island to be free of excitations within the measurement resolution.
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Electron Counting Capacitance Standard with an improved five-junction R-pump

TL;DR: In this article, a new generation of single-electron tunnelling devices with a relative charge transfer error of five electrons was used to successfully charge a cryogenic capacitor with an uncertainty of less than two parts, which is consistent with the value of the elementary charge.
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Electron Counting Capacitance Standard with an improved five-junction R-pump

TL;DR: In this paper, a five-junction R-pump was operated with a relative charge transfer error of five electrons in 10^7, and was used to successfully perform single-electron charging of a cryogenic capacitor.