Fabrication of novel rational Ti-Sn doped Cu-ferrite nanoparticles for robust photocatalysis reaction, magnetic resonance imaging, and chemo-magneto-photo-thermal therapy

The structural, electronic, optical, and mechanical characteristics of the cubic inorganic perovskites XZrO3 (X = Rb and K) based on Rb and K were studied using Cambridge Serial Total Energy Package (CASTEP)-based density functional theory (DFT) via the ultrasoft pseudo-potential (USP) plane wave and generalized gradient approximation (GGA)-Perdew–Burke–Ernzerhof (PBE) exchange–correlation functional. The measured lattice parameters are 3.55 Å and 4.23 Å, and the band gaps of RbZrO3 and KZrO3 are 3.57 eV and 3.78 eV, respectively. Our results indicate that the compounds have indirect and wide bandgaps, making them useful for improving conductivity. It is observed that the compounds have anisotropic, ductile, and brittle natures. The anisotropic factor values of RbZrO3 and KZrO3 are 0.67067 and 0.87224, and their Poisson's ratios are 0.27356 and 0.25853, respectively. In terms of optical properties, they exhibited high optical absorption and conductivity and were active in the visible region for solar cell applications. These results indicate that they could be highly useful for light-emitting diodes (LEDs) and other reflection purposes owing to their indirect bandgap. The results of our investigation of RbZrO3 and KZrO3 present them as favorable materials for solar cell and LED applications.

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Zirconium-based cubic-perovskite materials for photocatalytic solar cell applications: a DFT study

Deposition of electroless Ni–Cu–P coatings on L80 steel substrates and the effects of coatings thickness and heat treatment on the corrosion resistance

Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making them suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor. The samples were produced from p-type (100) Si wafers using a silver catalyzed top-down etching process. The piezoresistance response of these SiNW arrays was analyzed by measuring their I-V characteristics under applied uniaxial as well as isostatic pressure. The interconnected SiNWs exhibit increased mechanical stability in comparison with separated or periodic nanowires. The repeatability of the fabrication process and statistical distribution of measurements were also tested on several samples from different batches. A sensing resolution down to roughly 1m pressure was observed with uniaxial force application, and more than two orders of magnitude resistance variation were determined for isostatic pressure below atmospheric pressure.

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Piezoresistance Characterization of Silicon Nanowires in Uniaxial and Isostatic Pressure Variation

Green synthesis spinel ferrite nanosheets and their cytotoxicity and antibacterial activity

Wet etching of silicon carbide typically exhibits poor etching efficiency and low aspect ratio. In this study, an etching structure that exploits anisotropic charge carrier flow to enable high‐throughput, external‐bias‐free wet etching of high‐aspect‐ratio SiC micro/nano‐structures is demonstrated. Specifically, by applying a catalytic metal coating at the bottom surface of a SiC wafer while introducing patterned ultraviolet light illumination from its top surface, spatial charge separation across the wafer is achieved, i.e., photogenerated electrons are channeled to the bottom to participate in the reduction reaction of an oxidant in the etchant solution, while holes flow to the top to trigger oxidation of SiC and subsequent etching. Such design largely suppresses recombination‐induced charge losses, and when used in combination with a top metal catalyst mask, the structure yields a remarkable vertical etching rate of 0.737 µm min−1 and an aspect ratio of 3.2, setting new records for wet‐etching methods for SiC.

Anisotropic Charge Transport Enabling High‐Throughput and High‐Aspect‐Ratio Wet Etching of Silicon Carbide

Silicon Carbide Nano-Via Arrays Fabricated by Double-Sided Metal-Assisted Photochemical Etching


 Third-generation semiconductors have richer and better properties than traditional semiconductors, and show promising application prospects in high-power, high-temperature, high-frequency, and optoelectronic devices. Therefore, they have gained increasing interest and received extensive research attention in recent years. Electrochemical etching plays an important role in exploring the properties of third-generation semiconductors and related device fabrication. This paper systematically reviews the electrochemical etching process of silicon carbide and gallium nitride which are the typical representative of the third-generation semiconductors. Through subdividing the electrochemical etching approach into anodic oxidation etching, photoelectrochemical etching, and electroless photoelectrochemical etching, the mechanism of each electrochemical etching method is expounded, the influences of various etching parameters on the etching results are discussed, and the related applications of electrochemical etching in characterizing crystal defects, processing micro-nano structures, and fabricating microelectronic devices are summarized. Finally, future development in achieving more efficient electrochemical etching is briefly discussed. In general, this paper provides a systematic review of the electrochemical etching of third-generation semiconductors, which is helpful for researchers to supplement the content in this field, and even non-researchers in this field will be able to familiarize themselves with the relevant content quickly.

Shankun Dong

Papers

Anisotropic Charge Transport Enabling High‐Throughput and High‐Aspect‐Ratio Wet Etching of Silicon Carbide

Silicon Carbide Nano-Via Arrays Fabricated by Double-Sided Metal-Assisted Photochemical Etching

Review—Progress in Electrochemical Etching of Third-Generation Semiconductors