Journal•ISSN: 2162-8769
ECS Journal of Solid State Science and Technology
Electrochemical Society
About: ECS Journal of Solid State Science and Technology is an academic journal published by Electrochemical Society. The journal publishes majorly in the area(s): Chemistry & Engineering. It has an ISSN identifier of 2162-8769. Over the lifetime, 4052 publications have been published receiving 37247 citations. The journal is also known as: JSS & Electrochemical Society journal of solid state science and technology.
Papers
More filters
TL;DR: In this paper, the authors review the recent progress in this emerging field and critically assesses its current and future potential, and provide an empirical description of the ferroelectric stabilization in HfO2, from which additional dopants as well as alternative stabilization mechanism can be derived.
Abstract: Bound to complex perovskite systems, ferroelectric random access memory (FRAM) suffers from limited CMOS-compatibility and faces severe scaling issues in today's and future technology nodes. Nevertheless, compared to its current-driven non-volatile memory contenders, the field-driven FRAM excels in terms of low voltage operation and power consumption and therewith has managed to claim embedded as well as stand-alone niche markets. However, in order to overcome this restricted field of application, a material innovation is needed. With the ability to engineer ferroelectricity in HfO2, a high-k dielectric well established in memory and logic devices, a new material choice for improved manufacturability and scalability of future 1T and 1T-1C ferroelectric memories has emerged. This paper reviews the recent progress in this emerging field and critically assesses its current and future potential. Suitable memory concepts as well as new applications will be proposed accordingly. Moreover, an empirical description of the ferroelectric stabilization in HfO2 will be given, from which additional dopants as well as alternative stabilization mechanism for this phenomenon can be derived.
309 citations
304 citations
266 citations
TL;DR: The energy of the 4f-5d transitions of divalent and trivalent lanthanide impurities in compounds depends strongly on the type of the impurity, its valence, and its type of compound as mentioned in this paper.
Abstract: The energy of the 4f-5d transitions of divalent and trivalent lanthanide impurities in compounds depends strongly on the type of lanthanide, its valence, and the type of compound. Despite this large variability there is much systematic in 4f-5d transition energy. Once it is known for one lanthanide that for all others when in the same compound can be predicted. The same applies for the energy of electron transfer from the valence band to the 4f-shell of lanthanides which also behaves in a systematic fashion with type of lanthanide and type of compound. This work reviews my studies during the past fifteen years that are based on an analysis of data on all divalent and all trivalent lanthanides in more than 1000 different inorganic compounds collected from the archival literature. The established redshift and charge transfer models that form the basis to construct binding energy schemes showing all lanthanide levels with respect to the host bands are reviewed and the latest developments are addressed.
264 citations
TL;DR: In this article, a linear relationship between β1 and the energy of the 2Eg level was established, which made it possible to understand the large variation in the 2 Eg → 4 A2g emission transition that is frequently encountered in the spectroscopy of the Mn 4+ ions in solids.
Abstract: + ( C C0 ) 2 (where (B, C (B0, C0) are the Racah parameters of the Mn 4+ ions in a crystal (free state), respectively) was recently introduced that allows for establishing a linear relationship between β1 and the energy of the 2Eg level. This makes it possible to understand the large variation in the energy of the 2 Eg → 4 A2g emission transition that is frequently encountered in the spectroscopy of the Mn 4+ ions in solids.
239 citations