A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.

Nitride semiconductor device

A nitride semiconductor element exhibiting low leakage current and high ESD tolerance includes an active layer of nitride semiconductor that is interposed between a p-sided layer and an n-sided layer, which respectively consist of a plurality of nitride semiconductor layers, the p-side layer including a p-type contact layer as a layer for forming p-ohmic electrodes, the p-type contact layer being formed by laminating p-type nitride semiconductor layers and n-type nitride semiconductor layers in an alternate manner.

Nitride semiconductor element

A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

Gallium nitride-based III-V group compound semiconductor device and method of producing the same

Gallium nitride-based III-V group compound semiconductor

By doping an organic compound functioning as an electron donor (hereinafter referred to as donor molecules) into an organic compound layer contacting a cathode, donor levels can be formed between respective LUMO (lowest unoccupied molecular orbital) levels between the cathode and the organic compound layer, and therefore electrons can be injected from the cathode, and transmission of the injected electrons can be performed with good efficiency. Further, there are no problems such as excessive energy loss, deterioration of the organic compound layer itself, and the like accompanying electron movement, and therefore an increase in the electron injecting characteristics and a decrease in the driver voltage can both be achieved without depending on the work function of the cathode material.

Light Emitting Device

PURPOSE: To improve the luminance and life of a nitrogen-III compound semiconductor light emitting diode. CONSTITUTION: A 500Å AlN buffer layer 2, high carrier concentration n + -layer 3, approx. 2.2μm in film thickness and 2×10 18 /cm 3 in electron density, mode of silicon-doped GaN, low carrier concentration n-layer 4, approx. 1.5μm and 1×10 16 /cm 3 , made of non-doped GaN, low carrier concentration p-layer 51, approx. 0.5μ and 1×10 16 /cm 3 in hole density, made of Mg-doped GaN, and high carrier concentration p + -layer 52, approx. 0.2μm and 2×10 17 /cm 3 in hole density, are formed on a sapphire substrate 1 in this order. Nickel electrodes 7 and 8 are formed on the high carrier concentration p + -layer 52 and high carrier concentration n + 3, respectively. The nickel electrode 7 lowers the drive voltage. COPYRIGHT: (C)1994,JPO&Japio

Nitrogen-iii compound semiconductor luminous element and manufacture thereof

A heat ray reflective film having an excellent heat ray reflection function is provided. A heat ray reflective film 1 having a transparent base film 2 and a first sputtered layer 31, a second sputtered layer 32, and a third sputtered layer 33, which are sequentially laminated on the surface of the base film 2 by sputtering. . The first sputter layer 31 is a layer made of ITO with a film thickness of 18 to 25 nm, the second sputter layer 32 is a layer made of Ag with a film thickness of 5 to 10 nm, and the third sputter layer 33 is made of ITO. It is a layer having a film thickness of 36 to 55 nm. [Selection] Figure 1

Heat-ray reflecting film

PURPOSE: To obtain two semiconductors formed of group III nitride semiconductor by forming two semiconductor layers made of the group III nitride semiconductor on intermediate layers formed on both side surfaces if a sapphire board, removing only the two intermediate layers by wet etching, and peeling the two semiconductor layers from the board. CONSTITUTION: Intermediate layers 2a, 2b made of zinc oxide are formed on both side surfaces of a sapphire board 1. Two semiconductor layers 3a, 3b made of group III nitride semiconductor are respectively formed on the layers 2a, 2b. Only the layers 2a, 2b are removed by wet etching using solution for etching only the zinc oxide to peel the layers 3a, 3b from the board 1. Thus, two semiconductors made of the group III nitride semiconductor can be easily manufactured. COPYRIGHT: (C)1995,JPO

Manufacture of group iii nitride semiconductor

PURPOSE: To change a light emission pattern at the blue luminous region of a GaN compound semiconductor light-emitting diode close to a surface light emission from a point light emission and to improve the luminous intensity of the diode CONSTITUTION: An electrode 80 to a high-carrier concentration n + layer 3 and an electrode 70 to a high-impurity concentration iH layer 52 are provided The electrodes 70 and 80 are respectively constituted of first Ni layers 71 and 81 of a thickness of 100Å, second Ni layers 72 and 82 of a thickness of 1000Å, Al layers 73 and 83 of a thickness of 1500Å, Ti layers 74 and 84 of a thickness of 1000Å and third Ni layers 75 and 85 of a thickness of 2500Å As the Ni layers are formed into a double structure, relaxation layers can be respectively formed between the Ni layers and the Ni layers can be prevented from being peeled As a result of joining GaN with the Ni layers, the threshold voltage at the time of light emission of a GaN compound semiconductor light-emitting diode is reduced and at the same time, the luminous luminance of the diode is improved Moreover, a light emission pattern at the blue luminous region of the diode can be brought close to a surface light emission from a point light emission and the luminous intensity of the whole diode is improved COPYRIGHT: (C)1993,JPO&Japio

Gallium nitride compound semiconductor light emitting element

PROBLEM TO BE SOLVED: To provide an optical therapeutic apparatus lighter, smaller and inexpensive with a simple structure which achieves an easing of pains at an affected part in a short time without side effect or an applying of a massaging effect and a relaxing effect to the affected part for activation by irradiating a location corresponding to a meridian spot of a living being or an area smaller in skin resistance of the affected part with light of at least three colors, blue, green and red alternately or simultaneously by means of respective light emitting diode lamps. SOLUTION: This apparatus comprises a light projection part 2 with at least three types of light emitting diode lamps 1a, 1b and 1c for generating light of blue, red and green and a controller 5 containing a switch for selecting the light emitting diode lamps 1a-1c and a battery as power source. The light projection part 2 is provided with a condenser lens 6 to gather optical paths from the respective light emitting diode lamps.

勝英真部

Papers

Nitrogen-iii compound semiconductor luminous element and manufacture thereof

Heat-ray reflecting film

Manufacture of group iii nitride semiconductor

Gallium nitride compound semiconductor light emitting element

Light health apparatus

勝英 真部

Papers

Nitrogen-iii compound semiconductor luminous element and manufacture thereof

Heat-ray reflecting film

Manufacture of group iii nitride semiconductor

Gallium nitride compound semiconductor light emitting element

Light health apparatus

勝英真部