K
Katsuhide Manabe
Researcher at Nagoya University
Publications - 79
Citations - 1902
Katsuhide Manabe is an academic researcher from Nagoya University. The author has contributed to research in topics: Layer (electronics) & Gallium nitride. The author has an hindex of 20, co-authored 79 publications receiving 1893 citations. Previous affiliations of Katsuhide Manabe include Fujifilm Holdings Corporation & Paradigm.
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Patent
Gallium nitride group compound semiconductor laser diode
TL;DR: The improved gallium nitride group compound semiconductor laser diode of the present invention was found to emit light in the visible short wavelength spectrum of light which includes the blue, violet and ultraviolet regions as mentioned in this paper.
Patent
Light emitting semiconductor device using gallium nitride group compound
Katsuhide Manabe,Akira Mabuchi,Hisaki Kato,Michinari Sassa,Norikatsu Koide,Shiro Yamazaki,Masafumi Hashimoto,Isamu Akasaki +7 more
TL;DR: In this paper, a light-emitting semiconductor device that includes a gallium nitride compound semiconductor (AlxGa1-xN) comprising an n-layer and an i-layer, at least one of them being of a double layer structure is presented.
Patent
Method of fabricating a gallium nitride based semiconductor device with an aluminum and nitrogen containing intermediate layer
TL;DR: In this paper, a gallium nitride type semiconductor device with a single crystal of (Ga 1-x Al x ) 1-y In y N, which suppresses the occurrence of crystal defects and thus has very high crystallization and considerably excellent flatness, and a method of fabricating the same.
Patent
Process of vapor growth of gallium nitride and its apparatus
TL;DR: In this paper, a process and apparatus for the growth of a gallium nitride group semiconductor (Alx Ga1-x N; inclusive of x=0) thin film using an organometallic compound gas is described.
Patent
Substrate for growing gallium nitride compound-semiconductor device and light emitting diode
TL;DR: A substrate for producing a gallium nitride compound-semiconductor (Al.su Ga1-x N; X=0 inclusive) device in vapor phase on a sapphire substrate using gaseous organometallic compound, and a also blue light emitting diode produced by using the substrate.