Showing papers by "Shey-Shi Lu published in 1995"
TL;DR: The first Ga0.51In0.49P/GaAs inverted-structure high electron mobility transistors (I-HEMT) and insulated-gate inverted-STM transistors grown by gas source molecular beam epitaxy (GSMBE) have been fabricated and measured.
Abstract: The first Ga0.51In0.49P/GaAs inverted-structure high electron mobility transistors (I-HEMT) and insulated-gate inverted-structure high electron mobility transistors (I2HEMT) grown by gas source molecular beam epitaxy (GSMBE) have been fabricated and measured. Very high drain-to-source breakdown voltage was obtained in the I-HEMT (23 V) and I2HEMT (13 V). The maximum gms achieved for I-HEMT and I2HEMT were 120 and 100 mS/mm at room temperature, respectively. No I-V collapse was observed at 77 K. The high breakdown characteristics were attributed to the use of a high band gap GaInP passivation layer between the gate and drain. These results indicate that Ga0.51In0.49P/GaAs I-HEMT and I2HEMT are promising to be used as high breakdown (high power) devices.
17 citations
11 Oct 1995
TL;DR: In this article, a GaInP/GaAs MISFET with the undoped GAInP serving as the airbridge for gate metal to run over it between the active region and pad was designed and fabricated for high power and high frequency applications.
Abstract: A novel structure GaInP/GaAs MISFET with the undoped GaInP serving as the airbridge for gate metal to run over it between the active region and pad was designed and fabricated for high power and high frequency applications. Due to the GaInP airbridge gate structure, a high current drive, high breakdown, high linearity, high speed and low leakage gate current GaInP/GaAs MISFET was achieved.
1 citations
TL;DR: In this article, a high performance silicon piezoresistive accelerometer, fabricated by bulk micromachining with an almost linear I/O (acceleration / voltage) relationship from 0 to 90g over a 400Hz bandwidth suitable for vehicle's safety system, is described.
Abstract: In this paper, a high‐performance silicon piezoresistive accelerometer, fabricated by bulk micromachining with an almost linear I/O (acceleration / voltage) relationship from 0 to 90g over a 400Hz bandwidth suitable for vehicle's safety system, is described. This accelerometer is composed of two glass cover caps and a Si sensing structure. The size of the sensing structure is 3.3mm × 2.05 mm × 0.15 mm. It consisted of a “mass”, a “frame”, and 4 thin beam “bridges”. The sensitivity of the accelerometer was found to be 9.6 × 10‐8 (sec2/m) and a gauge factor of 18 was deduced from this value.
1 citations