The line material is of a laminated structure consisting of: a Ta containing N alloy layer (lower layer) which is a first metal layer made of at least an alloy selected from the group consisting of a TaN alloy, a Ta-Mo-N alloy, a Ta-Nb-N alloy and a Ta-W-N alloy; a second metal layer (upper layer) formed integrally with the first metal layer and made of at least an alloy selected from the group consisting of Ta, a Ta-Mo alloy, a Ta-Nb alloy, a Ta-W alloy, a TaN alloy, a Ta-Mo-N alloy, a Ta-Nb-N alloy and a Ta-W-N alloy; and/or a pin hole-free oxide film. The line material of the laminated structure is to be applied to the formation of signal lines and electrodes of, e.g., a liquid crystal display. The line material has a low resistance and the insulating film formed by anodization and the like exhibits excellent insulation and thermal stability. Therefore, when the line material is applied to signal lines of various devices, it exhibits excellent characteristics.

Line material, electronic device using the line material and liquid crystal display

In a ceramic substrate with a thin-film capacitor, having a ceramic substrate a lower electrode layer formed on the ceramic substrate, a dielectric layer formed on the lower electrode layer and made of an oxide of a material constituting the lower electrode layer, and an upper electrode layer formed on the dielectric layer, a plating layer is provided between the ceramic base and the lower electrode layer to serve as a basis for the lower electrode layer.

Ceramic substrate with thin-film capacitor and method of producing the same

A process has been developed for fabricating a nonpolar low loss thin film capacitor utilizing tantalum oxide for high capacitance per unit area as a dielectric which is deposited in film form relative to a suitable substrate. A counter electrode is deposited on a substrate. A film of metal having a high recrystallization temperature is deposited on the counter electrode. This deposition forms the bottom electrode of the capacitor structure. The metal film has a quality thermal expansion resistance and a high reliability in thermal environments.

Method for fabricating a thin film capacitor

A method for producing a semiconductor device including forming an electrode or an electrode wiring by forming a tantalum thin film by sputtering is provided. In this method, a krypton gas in which nitrogen is mixed as a reactive gas is used as a sputtering gas, and a product of the pressure of the sputtering gas and a target-substrate distance is set in the range of 0.01 m.Pa to 0.08 m.Pa.

Method for producing a semiconductor device having a tantalum thin film

Thermal oxidation of β-Ta below 500 °C

A low specific resistive conductive thin film for a thin film integrated circuit includes a high conductivity metal film formed on an insulating base plate. An insulator film is formed over that metal film. A metal succeptible to being anodically oxidized is formed over the insulator film and penetrates through fine pores in the insulator film to make electrical contact with the first-mentioned metal film.

Process for manufacturing a conductive film for a thin film integrated circuit device

A capacitor has been developed which is superior to previously reported duplex capacitors. The dielectric consists of anodic tantalum oxide overlaid with silicon dioxide deposited by RF sputtering. This capacitor proved usefuI as a low-valued capacitor Of capacitance density ranging from 150 pF/mm2to 20 pF/mm2, corresponding to a thickness range of a silicon dioxide film from 0.2 µ/m to 2.0µm. The capacitor can be produced with very high yield Of approximately 100%, due to the defect-free anodic oxide film diminishing the importance of defects inevitably induced in the RF sputtered silicon dioxide film. The silicon dioxide film can be deposited without causing any deterioration of the anodic film of tantalum oxide by Control of the RFsputtering conditions. The capacitor remained stable with no failures occurring when aged under various conditions of voltage, temperature, and humidity. The capacitor can be processed in a manner compatible with the manufacturing process of the TM or TMM capacitor.

https://ieeexplore.ieee.org/iel6/8217/25367/01136730.pdf

An SiO 2 -Ta 2 O 5 Thin Film Capacitor

Here, deposition of SiO2 film by RF-sputtering onto the anodic Ta2O5 film for fabrication of an SiO2-Ta2O5 thin film capacitor is reported. Reproducible film deposition rate is achieved within the accuracy of 3% by decreasing the influence of adsorbed gases in the vacuum chamber. Argon pressure is adjusted in order to obtain the uniform deposition of the SiO2 film. The thickness distribution is less than 3% within the area covered by 70% of target radius. The standard deviation of capacitance due to the distribution of SiO2 films is about 2.5% of the average capacitance.The substate temperature should be precisely controlled during RF-sputtering for the realization of the capacitor with excellent electrical characteristics. The high substrate temperature causes deterioration of Ta2O5, but the SiO2 film deposited at low temperature has poor life stability and large capacitance change in moisture. The optimum substrate temperature is about 150 °C for the SiO2 film deposition onto the anodic Ta2O5 film.

Shigehiko Sato

Papers

Process for manufacturing a conductive film for a thin film integrated circuit device

An SiO 2 -Ta 2 O 5 Thin Film Capacitor

Thin Film SiO2 Deposition by RF Sputtering onto the Anodic Ta2O5 Film