S
Shigeru Harada
Researcher at Mitsubishi
Publications - 33
Citations - 324
Shigeru Harada is an academic researcher from Mitsubishi. The author has contributed to research in topics: Layer (electronics) & Semiconductor device. The author has an hindex of 10, co-authored 33 publications receiving 324 citations.
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Patent
Method of producing semiconductor device
TL;DR: In this paper, a silicon oxide film is formed as an under film on a glass substrate and then an amorphous silicon film is created thereon using hydrogen plasma produced by a frequency of 50 to 100 MHz.
Patent
Apparatus for forming a thin film
TL;DR: In this article, the reaction chambers are formed by a single housing having a partition which has an orifice therein and which divides the housing into two reaction chambers, one for generating a thin film and the other for generating reactive atoms.
Patent
Semiconductor device having a multilayer interconnection structure
Hiroyuki Nishimura,Hiroshi Adachi,Etsushi Adachi,Shigeyuki Yamamoto,Shintaro Minami,Shigeru Harada,Toru Tajima,Kimio Hagi +7 more
TL;DR: In this paper, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO) 2 (R 2 Si 2 O 3 ) n H 2.
Patent
Semiconductor device and a method of producing same
TL;DR: A semiconductor device which includes an electrode portion formed on a wafer, a passivation film deposited on said wafer except for said electrode portion, an insulating film deposited only on said passivation, and conductive material embedded in said concave portion at least up to the height of the thickness of the insulating material is intended to be used for bonding to a substrate as mentioned in this paper.
Patent
Method of making a semiconductor device
Hiroyuki Nishimura,Hiroshi Adachi,Etsushi Adachi,Shigeyuki Yamamoto,Shintaro Minami,Shigeru Harada,Toru Tajima,Kimio Hagi +7 more
TL;DR: In this article, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO)2 (R2 Si2 O3)n H2.