An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A method is presented for interconnecting bond pads of a flip chip with bond pads of a substrate by an electrically conductive polymer. An organic protective layer is selectively formed over a surface of a flip chip to thereby leave exposed bond pads on the flip chip. An electrically conductive polymerizable precursor is disposed on the bond pads extending to a level beyond the organic protective layer to thereby form bumps. The bumps are aligned with bond pads of a substrate and then contacted to those bond pads. The bumps can be polymerized either before or after contacting the bumps to the bond pads of the substrate to form electrically conductive interconnections between the bond pads of the flip chip and the bond pads of the substrate.

Flip chip technology using electrically conductive polymers and dielectrics

A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes photolithographically defining the predetermined pattern in the carbon-containing hard mask layer, and etching the target layer in the presence of the hard mask layer.

Semiconductor substrate process using a low temperature-deposited carbon-containing hard mask

A plasma immersion ion implantation reactor for implanting a species into a workpiece includes an enclosure which has a side wall and a ceiling defining a chamber, and a workpiece support pedestal within the chamber for supporting a workpiece having a surface layer into which the species are to be ion implanted, the workpiece support pedestal facing an interior surface of the ceiling so as to define therebetween a process region extending generally across the diameter of the wafer support pedestal. The reactor further includes an RF plasma source power generator connected across the ceiling or the sidewall and the workpiece support pedestal for capacitively coupling RF source power into the chamber. A gas distribution apparatus is provided for furnishing process gas into the chamber and a supply of process gas is provided for furnishing to the gas distribution devices a process gas containing the species. An RF bias generator is connected to the workpiece support pedestal and has an RF bias frequency for establishing an RF bias.

Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage

A method is presented for forming a bumped substrate and for forming an electrical circuit which includes the bumped substrate. The method of forming the bumped substrate includes forming at least one electrically conductive polymer bump on each of a first set of bond pads of the substrate. At least one electrically conductive polymer bump is then formed on each of a second set of the bond pads of the substrate. The circuit is formed by selectively forming an organic protective layer around the bond pads of a second substrate by laser ablation of an organic protective coating on the second substrate. The electrically conductive polymer bumps on the first and second portions of the bond pads of the first substrate are then contacted with the bond pads of the second substrate, thereby forming the electrical circuit.

Method of forming electrically conductive polymer interconnects on electrical substrates

A silicon oxide film is formed as an under film on a glass substrate and then an amorphous silicon film is formed thereon. Using hydrogen plasma produced by a frequency of 50 to 100 MHz, the amorphous silicon film formed on the glass substrate is processed. In this plasma processing, hydrogen atoms in the amorphous silicon film is combined with hydrogen atoms in the plasma with a high energy state, so that a gas is generated and the dehydrogenation from the amorphous silicon film progresses. After the dehydrogenation is completed, the heating treatment is performed to crystallize the amorphous silicon film and to transform the amorphous silicon film into a crystalline silicon film.

Method of producing semiconductor device

In an automatic thin-film measuring apparatus, the zero point of a precision balance is corrected according to directions from a data processing unit before and after the weight of a semiconductor substrate is measured, the surface temperature of the semiconductor substrate laid on a pan of the precision balance is measured, and the weight of the semiconductor substrate is measured when the surface temperature reaches a predetermined value. Furthermore, the cycle of variations in the zero point is found when the zero point is corrected, and the weight measurement of the semiconductor substrate is conducted during an integer multiple of the change cycle. Therefore, it is possible to enhance the precision of the weight measurement and its reproducibility and to shorten the measurement time without being influenced by low-frequency vibrations.

Automatic thin-film measuring apparatus

The rough ground rear surface 13b of a semiconductor wafer 11 is mirror-polished by localized irradiation with a focused laser beam 21 The wafer is moved relative to the beam, and the melt puddle formed by the beam thereafter recrystallizes at its trailing edge 24 to leave a mirror smooth rear surface 13c

Laser polishing semiconductor wafer

A semiconductor device which includes an electrode portion formed on a wafer; a passivation film deposited on said wafer except for said electrode portion; an insulating film deposited only on said passivation film so as to have a predetermined thickness anad so as to include a concave portion over said electrode portion; and conductive material embedded in said concave portion at least up to the height of said insulating film, wherein the conductive material is intended to be used for bonding to a substrate.

Semiconductor device and a method of producing same

A homogeneous fine grained metal film (6') on a substrate in accordance with the present invention comprises multiple metal layers and intervening layers (14) between the respective metal layers, the intervening layers being formed of a compound of the metal and a reactive gas and serving to suppress growth of grains (12') in the respective metal layers and to suppress electromigration of grain boundaries (13'). In a method for manufacturing a metal film (6') having homogeneous and fine grains on a substrate in accordance with the present invention, one or more intervening layers (14) are formed by introducing a gas reactive with the metal film one or more times during deposition of the metal film, whereby intervening layers of a metal compound are interposed between the successively deposited metal layers. Thus, a metal film of a multilayered structure including multiple metal layers separated by the intervening layers is formed.

Yoshihiro Hirata

Papers

Method of producing semiconductor device

Automatic thin-film measuring apparatus

Laser polishing semiconductor wafer

Semiconductor device and a method of producing same

Homogeneous fine grained metal film on substrate and manufacturing method thereof