An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

In this study, we demonstrate self-biased magnetoelectric effect in homogenous two-phase magnetostrictive-piezoelectric laminates. Our results illustrate the method for tuning the magnitude of self-bias effect and provide understanding behind the hysteretic changes. We model this phenomenon by considering the magnetization hysteresis with shape-induced demagnetization effect. The self-biased response was found to be directly related to the nature of magnetization and can be tuned by variation in demagnetization state and the resultant differential magnetic flux distribution. These results present significant advancement toward development of AC magnetic field sensor and magnetoelectric composite based on-chip devices by eliminating the need for DC bias.

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Tunable self-biased magnetoelectric response in homogenous laminates

The subband structure of a heavily doped n -type GaAs-Ga 1- x Al x As superlattice is calculated. A band bending effect caused by charge transfer from the Ga 1- x Al x As to GaAs layers is taken into account self-consistently in the Hartree approximation. When the wavefunction along the superlattice direction is rather localized, the band bending effect is crucial especially in the case of modulation doping where only the Ga 1- x Al x As layer is heavily doped and the GaAs layer remains undoped. Calculated results are in good agreement with recent experiments. Many-body effects such as exchange and correlation are studied in the density-functional formulation, but shown to be unimportant. Intersubband optical absorptions are also investigated. A local field effect can shift resonance energies to higher energy side considerably.

Electronic Properties of a Semiconductor Superlattice. I. Self-Consistent Calculation of Subband Structure and Optical Spectra

The magnetic properties of the glassy Fe-(Al, Ga)-(P, C, B, Si, Ge) alloys have been compared with those of the conventional Fe-based amorphous alloys to clarify the feature of the glassy alloys as a soft magnetic material. The glassy Fe-(Al, Ga)-(P, C, B, Si, Ge) alloys exhibit lower saturation magnetization (Js) than that of the conventional Fe-(B, Si, C) amorphous alloys with the same Fe content. The glassy alloys also have larger saturation magnetostriction constant (� s) than that of the conventional Fe-based amorphous alloys with the same Js. However, the

Origin of Low Coercivity of Fe-(Al, Ga)-(P, C, B, Si, Ge) Bulk Glassy Alloys

Impacts of amorphous metal-based transformers on energy efficiency and environment

The magnetostriction constant and saturation magnetization at room temperature are measured for iron‐based amorphous alloys containing various kinds of metalloid and metal atoms, except Co and Ni. The data show that the magnetostriction constant is proportional to the square of the saturation magnetization for these alloys.

Magnetostriction and magnetization of iron-based amorphous alloys

An amorphous magnetic alloy consists of 2 to 20 at % (atomic percent) of ruthenium atoms; 10 to 30 at % of atoms of at least one amorphous forming element selected from the group consisting of phosphorus, carbon, silicon, boron and germanium; and iron atoms as the predominant component of the balance.

Amorphous magnetic alloy

A method of making a substantially ordered alloy which involves providing a metal base consisting of at least one of the ingredients of the desired alloy, depositing a thin metal layer on the base, the metal layer containing the remaining constituents of the desired alloy, and heating the metal base and the deposited metal layer at a temperature below the order-disorder transformation temperature of the ordered alloy to be formed to thereby cause the ordered alloy to be produced by diffusion.

Method of making an ordered alloy

Magnetic alloy containing platinum, cobalt and nickel is disclosed which is suitable for use with magnetic recording medium, especially for use with an intermediate magnetic recording medium in thermo and magneto printing.

Magnetic alloy for use in thermo and magneto printing

Magnetic hysteresis loops were measured for polished Co‐based Co‐Fe amorphous alloys using a longitudinal Kerr effect apparatus. Squared and constricted, or so‐called perminvar, loops were observed when the direction of the applied magnetic field was parallel and normal to the direction of polishing in the specimen surface, respectively, where magnetostriction constant λs of the specimen takes a small positive, zero, or fairly small negative value. This feature is remarkably emphasized for the specimen with λs ≃0, while it is inverted for the specimen with a relatively large negative value of λs, at least with λs ≃−1.4×10−6. That is, the easy direction of magnetization is changed into the normal direction to the one of polishing, and the perminvar loop is observed in the direction of polishing.

Shigeyasu Ito

Papers

Magnetostriction and magnetization of iron-based amorphous alloys

Amorphous magnetic alloy

Method of making an ordered alloy

Magnetic alloy for use in thermo and magneto printing

Observation of magnetic hysteresis loop of the perminvar type in worked Co‐based amorphous alloys