An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

A light-absorbing layer is selectively formed over an insulating surface, an insulating layer is formed over the insulating surface and the light-absorbing layer, the insulating surface, the light-absorbing layer, and the insulating layer are irradiated with laser light to selectively remove only the insulating layer above the light-absorbing layer in an irradiated region of the insulating layer so that an opening reaching the light-absorbing layer is formed in the insulating layer, and a conductive film is formed in the opening so as to be in contact with the light-absorbing layer. By forming the conductive film in the opening so as to be in contact with the exposed light-absorbing layer, the conductive film can be electrically connected to the light-absorbing layer with the insulating layer interposed therebetween.

Method for manufacturing display device

At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber.

Method of Manufacturing a Semiconductor Device

A liquid crystal display having a wide viewing angle and easily manufactured. The liquid crystal display comprises an upper substrate and a lower substrate, and a liquid crystal material disposed between the upper substrate and the lower substrate. The liquid crystal display has a conductive protrusion disposed on the surface of the upper substrate opposing to the lower substrate. The conductive protrusion is disposed over a scanning electrode line or a signal electrode line and has the same potential as that of the upper electrode. As another structure, each of pixel electrodes on the lower substrate has a smaller area than that of a common electrode on the upper substrate and is covered by the common electrode, and each of the pixel electrodes comprises an electrode portion having approximately symmetrical shape.

Liquid crystal display and method of manufacturing the same and method of driving the same

PURPOSE:To reduce operating time and costs by removing n a-Si and a-Si layers located at a display section through a dry process using source and drain electrodes as masks. CONSTITUTION:A gate electrode 12 is formed on a transparent insulating substrate 11, and gate insulating film 13, a-Si layer 14, n a-Si layer 14' and a single-or double-layered metal film (electrode material) are formed in the form of films on the gate electrode 12. Subsequently, source and drain electrodes 15 and 16 are patterned using a photolithographic technique, and n a-Si layer 14' and a-Si layer 14 located at an indication part are removed by a dry process using the electrodes 15 and 16 as masks. After that, display electrode 17, source electrode 15 and drain electrode 16 are formed and the n a-Si layer 14' exposed at a channel part is removed by a dry process to form a surface protecting film 18. Thus, a thin film transistor 19 is obtained.

Manufacture of thin film transistor

PURPOSE:To improve a display grade and the yield of production by dry spraying spacers to a transparent electrode substrate in a negatively electrified state and impressing a positive potential to the wiring electrodes of the transparent electrode substrate. CONSTITUTION:The spacers 4 are housed in a tank 10 and are injected toward the transparent electrode substrate 2 imposed on a base 11 from a nozzle 10b by applying the pressure of gaseous nitrogen, etc., thereto from a piping 10a. A discharge electrode 12 is provided in proximity to the nozzle 10b to negatively electrify the spacers 4 injected from the nozzle 10b. A control grid 13 is simultaneously provided between the nozzle 10b and the transparent electrode substrate 2 and the electrification quantity of the spacers 4 passing the control grid 13 is controlled. The positive potential is impressed to a wiring electrode 2a on the side of the transparent electrode substrate 2 when the spraying of the spacers 4 is executed. The spacers 4 are selectively stuck to the substrate by Coulomb force without being stuck to the picture element electrodes. Then, the degradation in the on-off ratio in the picture element electrode parts is prevented.

Produciton of liquid crystal display element

PURPOSE: To provide the liquid crystal display device which holds the gap interval between liquid crystal layers without using any conventional gap control agent and its manufacture. CONSTITUTION: This liquid crystal display device has 1st and 2nd substrates 10 and 22 which are arranged opposite each other, a 1st projection part that is formed on the surface of the 1st substrate 10 which faces the 2nd substrate and includes thin film transistors 13, 16, and 17, a 2nd projection part that is formed on the surface of the 2nd substrate 22 which faces the 1st substrate NO opposite the thin film transistor elements 13, 16, and 17 and includes color filters 24 and 25 and a light shield film 23, and a liquid crystal layer 29 which is arranged between the opposite surfaces of the 1st and 2nd substrates 10 and 22; and the 1st and 2nd projection parts are made to abut on each other, thereby holding the interval between the 1st and 2nd substrates 10 and 22. COPYRIGHT: (C)1993,JPO&Japio

Liquid crystal display device and its production

PURPOSE: To easily control the etching operation of a semiconductor layer, to eliminate a drop in the insulation of a gate insulating film and to enhance reliability and productivity by a method wherein the gate insulating film is formed of a three-layer laminated structure in which adjacent layers are formed of mutually different materials and the semiconductor layer is formed on it. CONSTITUTION: A gate electrode 20 for a transistor is formed and patterned on a glass substrate 10. In addition, three layers by a first gate insulating film 30, a second gate insulating film 40 and a third gate insulating film 50 in the order from the side close to the substrate 10 are laminated on it. An amorphous silicon semiconductor layer (a-Si) 60 constituting a channel is formed on the third gate insulating film 50 so as to face the gate electrode 50. The film 50 is formed of a siliocn nitride film by a plasma CVD method. When an etching operation is shifted from the semiconductor layer to the film 50, the plasma luminous peak of nitrogen is detected and an etching end point is detected. Thereby, a thin-film transistor in which a source is not short-circuited with a gate, whose insulating property is excellent and whose characteristic is stable can be manufactured with good reproducibility. COPYRIGHT: (C)1992,JPO&Japio

Shinichi Imashiro

Papers

Manufacture of thin film transistor

Produciton of liquid crystal display element

Liquid crystal display device and its production

Thin film transistor and its manufacture