Patent
Manufacture of thin film transistor
TLDR
In this paper, the authors proposed to reduce operating time and costs by removing n aSi and a-Si layers located at a display section through a dry process using source and drain electrodes as masks.Abstract:
PURPOSE:To reduce operating time and costs by removing n a-Si and a-Si layers located at a display section through a dry process using source and drain electrodes as masks. CONSTITUTION:A gate electrode 12 is formed on a transparent insulating substrate 11, and gate insulating film 13, a-Si layer 14, n a-Si layer 14' and a single-or double-layered metal film (electrode material) are formed in the form of films on the gate electrode 12. Subsequently, source and drain electrodes 15 and 16 are patterned using a photolithographic technique, and n a-Si layer 14' and a-Si layer 14 located at an indication part are removed by a dry process using the electrodes 15 and 16 as masks. After that, display electrode 17, source electrode 15 and drain electrode 16 are formed and the n a-Si layer 14' exposed at a channel part is removed by a dry process to form a surface protecting film 18. Thus, a thin film transistor 19 is obtained.read more
Citations
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Semiconductor device, and manufacturing method thereof
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TL;DR: In this article, the authors proposed a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.
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TL;DR: In this article, the amorphous silicon film is formed using silane gas diluted with hydrogen and crystallization is attained in the crystallization process even with the continuous formation of the base film through the polysilicon film in the single film forming chamber.
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Active matrix substrate plate and manufacturing method therefor
Shigeru Kimura,Takahiko Watanabe,Tae Yoshikawa,Hiroyuki Uchida,Shusaku Kido,Shinichi Nakata,Tsutomu Hamada,Hisanobu Shimodouzono,Satoshi Doi,Toshihiko Harano,Akitoshi Maeda,Satoshi Ihida,Hiroaki Tanaka,Takasuke Hayase,Shouichi Kuroha,Hirofumi Ihara,Kazushige Takechi +16 more
TL;DR: In this article, an active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps, where the scanning line and the gate electrode are formed in the glass plate.
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Thin film transistor and a method of manufacturing thereof
TL;DR: In this paper, a method of manufacturing a thin film transistor (TFT) is described, where amorphous silicon is formed by ion-implanting either silicon or nitrogen into a region of polysilicon while a region located at the sidewall of a gate electrode is selectively left using the stepped portion of the gate electrode.
References
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Patent
Manufacture of thin film transistor
TL;DR: In this article, an opaque gate electrode is formed on a transparent substrate, and the substrate is coated with a negative resist, which is then exposed and developed; thereafter, a gate insulation film is deposited on the substrate by etching an insulation film.
Patent
Thin film transistor
TL;DR: In this paper, the authors proposed a method to obtain a vertical TFT which is made of amorphous semiconductor and is operated with a high speed and has a high ON/OFF ratio.
Patent
Amorphous silicon thin film transistor and manufacture thereof
TL;DR: In this paper, a gate electrode is formed on a semiconductor layer through an insulation layer, and N layers are formed in parallel isolated from each other on a clean surface of the semiconductor.
Patent
Manufacture of thin-film transistor device
TL;DR: In this article, a transparent conductive film was used as source and drain electrodes to facilitate the increase of an area and the shortening of a channel by using a transparent conductor as source or drain electrodes and forming the source and drains in a self-alignment manner through beam exposure from the back side of a substrate while employing a gate electrode as a mask.
Patent
Forming method of plasma cvd film
Hideo Sakai,Sugawara Katsuo +1 more
TL;DR: In this paper, a method to obtain CVD films of good stability by performing pretreatment of wafer surfaces with the same bell-jar to beforehand activate the surfaces, and in succession growing Si3N4 films continuously.