An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manufactured by a step different from a source signal line in a driver circuit portion. The power supply line in the pixel portion is manufactured by a step different from a power supply line led on a substrate. A terminal is similarly plated to made the resistance reduction. It is desirable that a wiring before plating is made of the same material as a gate electrode and the surface of the wiring is plated to form the source signal line or the power supply line.

Light emitting device and method of manufacturing the same

The phase-shifting mask consists of a normal transmission mask that has been coated with a transparent layer patterned to ensure that the optical phases of nearest apertures are opposite. Destructive interference between waves from adjacent apertures cancels some diffraction effects and increases the spatial resolution with which such patterns can be projected. A simple theory predicts a near doubling of resolution for illumination with partial incoherence σ < 0.3, and substantial improvements in resolution for σ < 0.7. Initial results obtained with a phase-shifting mask patterned with typical device structures by electron-beam lithography and exposed using a Mann 4800 10× tool reveals a 40-percent increase in usuable resolution with some structures printed at a resolution of 1000 lines/mm. Phase-shifting mask structures can be used to facilitate proximity printing with larger gaps between mask and wafer. Theory indicates that the increase in resolution is accompanied by a minimal decrease in depth of focus. Thus the phase-shifting mask may be the most desirable device for enhancing optical lithography resolution in the VLSI/VHSIC era.

Improving resolution in photolithography with a phase-shifting mask

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

Lithographic apparatus, and device manufacturing method

Lithographic characteristics of dual-trench type alternating phase-shifting mask (PSM), whose shifters are made of perpendicular trenches with different depth alternately, are evaluated numerically and experimentally. The structure of dual-trench type PSM could reduce the difference of adjacent peak intensities created by topography on the mask. Exposure characteristics of the mask varied with depth of deep and shallow trenches, and depth of both trenches should be controlled so as to have the optimum value. Mainly, the difference in depth of deep and shallow trenches caused varying "effective phase" and depth of shallow trench caused varying "effective transmission". The depth of focus using the mask was sensitive to the effective phase difference controlled by adjusting etched depth difference between both trenches, and insensitive to depth of shallow portion. From analysis of mask process margin, respecting acceptable error of depth of both trenches, it was found that the effective transmission error caused reduction of acceptable depth error.

Subquarter-micron lithography with dual-trench-type alternating PSM

A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.

Processing method, manufacturing method of semiconductor device, and processing apparatus

An apparatus for processing a substrate comprising a substrate holding mechanism for holding the substrate substantially horizontally, a chemical solution discharge/suction mechanism having a chemical solution discharge/suction portion which has a chemical solution outlet for discharging a chemical solution onto the substrate and chemical solution inlets for sucking up the chemical solution present on the substrate, and a chemical solution supply/suction system for supplying the chemical solution to the chemical solution discharge/suction mechanism simultaneously with sucking the chemical solution by the chemical solution supply/suction mechanism.

Substrate processing apparatus and processing method by use of the apparatus

A pattern forming method includes forming a resist film on a substrate, coating the resist film with a coating solution which forms a cover film on the resist film to form the cover film on the resist film, transferring a pattern onto the resist film by an immersion lithography method using a liquid immersion fluid to form a latent image on the resist film, removing the cover film after the formation of the latent image, conducting a first inspection to inspect whether or not the cover film has a defect between said forming the latent image and said removing the cover film, performing predetermined processing when the defect is found in the first inspection, and developing the resist film to form a resist pattern on the substrate after said removing the cover film.

Pattern forming method and method of manufacturing semiconductor device

PURPOSE: To provide a process for producing a mask for exposure capable of preventing the variations in physical properties of a phase shift film accompanying irradiation with exposing light or lapse of time and contributing to an improvement in the transfer accuracy of patterns. CONSTITUTION: An SiN phase shift film 502 is formed on a transparent substrate 501 made of quartz and thereafter, the reforming and stabilizing treatment of the phase shift film 502 is executed by oxidizing the film in an ozone atmosphere without exposure of the phase shift film 502 to the atm. and further, uniformly irradiating the film with far UV rays by a low-pressure mercury lamp, by which the optical constant of the phase shift film 502 is adjusted to a desired phase difference and transmittance in the process for producing the mask for exposure having the phase shift film. A resist 503 is then applied on the phase shift film 502 and resist patterns are formed by exposing the resist 503. The exposed parts of the phase shift film 502 are then removed with the resist patterns as a mask. COPYRIGHT: (C)1996,JPO

Shinichi Ito

Papers

Subquarter-micron lithography with dual-trench-type alternating PSM

Processing method, manufacturing method of semiconductor device, and processing apparatus

Substrate processing apparatus and processing method by use of the apparatus

Pattern forming method and method of manufacturing semiconductor device

Production of mask for exposure and apparatus for production therefor