健二 川野

TL;DR: In this paper, a SiN phase shift film is formed on a transparent substrate made of quartz and then the reforming and stabilizing treatment of the phase shift mask is executed by oxidizing the mask in an ozone atmosphere without exposure of the mask to the atm. and further, uniformly irradiating the film with far UV rays by a low-pressure mercury lamp, by which the optical constant of the Phase Shift film 502 is adjusted to a desired phase difference and transmittance in the process for producing the mask for exposure.

TL;DR: In this paper, a mask for exposing is constituted by forming translucent regions and transparent regions to exposing light on a transparent substrate and is so constituted that the phase difference between the light passing the translucent region and the light passed the transparent regions and the transmittance of the translucent regions satisfy desired values.

TL;DR: In this paper, the authors proposed an exposure half-tone type phase shift mask capable of preventing the fluctuation of the physical properties of a translucent film due to the irradiation of exposure light, and contributing to the improvement of pattern transfer accuracy.

TL;DR: In this article, the warpage of a wafer is measured in the device 10 before a process for heat-treating the wafer and in the process for heating the wafers, the temperature of the hot plate is changed in the in-surface direction of the walfers so that the longer the distance between the substrate and the hot plates on the surface placed with the substrate of a hot plate, the more a feed quantity of heat is increased on the basis of the measured quantity of warpage.

TL;DR: In this article, a mask has an exposure quantity monitor mark and a focus monitor mark, arranged so as to separately monitor an effective exposure quantity and focus on a wafer, and the method includes a process (step S4) for forming an exposure-quantity monitor pattern and an optimal focus monitor pattern.