S
Shiro Ozaki
Researcher at Fujitsu
Publications - 32
Citations - 339
Shiro Ozaki is an academic researcher from Fujitsu. The author has contributed to research in topics: Layer (electronics) & Semiconductor device. The author has an hindex of 8, co-authored 32 publications receiving 229 citations. Previous affiliations of Shiro Ozaki include Hokkaido University.
Papers
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Journal ArticleDOI
An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader
Toshihiro Ohki,Atsushi Yamada,Yuichi Minoura,Kozo Makiyama,Junji Kotani,Shiro Ozaki,Masaru Sato,Naoya Okamoto,Kazukiyo Joshin,Norikazu Nakamura +9 more
TL;DR: In this article, an InAlGaN/GaN high-electron-mobility transistor (HEMT) employing a SiC/diamond-bonded heat spreader with a record high output power density of 22.3 W/mm was reported.
Proceedings ArticleDOI
3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier
Yoshitaka Niida,Yoichi Kamada,Toshihiro Ohki,Shiro Ozaki,Kozo Makiyama,Yuichi Minoura,Naoya Okamoto,Masaru Sato,Kazukiyo Joshin,Keiji Watanabe +9 more
TL;DR: In this paper, a W-band high-power-density MMIC power amplifier with 80 nm InAlGaN/GaN HEMTs was demonstrated, which achieved a maximum output power of 1.15 W and maximum PAE of 12.3 % at 86 GHz under CW operation.
Journal ArticleDOI
Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors
TL;DR: In this article, a bias-annealed Al2O3-gate MOS-HEMT with and without bias annealing in air at 300 °C was investigated and compared with the as-fabricated (unannealed) MOS HEMTs.
Journal ArticleDOI
Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates
Yusuke Kumazaki,Toshihiro Ohki,Junji Kotani,Shiro Ozaki,Yoshitaka Niida,Yuichi Minoura,Masato Nishimori,Naoya Okamoto,Masaru Sato,Norikazu Nakamura,Keiji Watanabe +10 more
TL;DR: In this paper, a GaN high-electron-mobility transistors (HEMTs) on GaN substrates with reduced interface contamination was demonstrated. But the performance of the GaN HEMTs was limited to 2.45 GHz.
Journal ArticleDOI
Effect of Atomic-Layer-Deposition Method on Threshold Voltage Shift in AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors
TL;DR: In this article, the mechanism for threshold voltage (Vth) shift of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for power applications was investigated.