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Atsushi Yamada
Researcher at Fujitsu
Publications - 38
Citations - 586
Atsushi Yamada is an academic researcher from Fujitsu. The author has contributed to research in topics: High-electron-mobility transistor & Layer (electronics). The author has an hindex of 9, co-authored 33 publications receiving 469 citations.
Papers
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Journal ArticleDOI
Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics
Masahito Kanamura,Toshihiro Ohki,Toshihide Kikkawa,Kenji Imanishi,Tadahiro Imada,Atsushi Yamada,Naoki Hara +6 more
TL;DR: In this article, the authors present details of high-performance enhancement-mode GaN MIS high-electron-mobility transistor (MIS-HEMT) devices.
Journal ArticleDOI
An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader
Toshihiro Ohki,Atsushi Yamada,Yuichi Minoura,Kozo Makiyama,Junji Kotani,Shiro Ozaki,Masaru Sato,Naoya Okamoto,Kazukiyo Joshin,Norikazu Nakamura +9 more
TL;DR: In this article, an InAlGaN/GaN high-electron-mobility transistor (HEMT) employing a SiC/diamond-bonded heat spreader with a record high output power density of 22.3 W/mm was reported.
Proceedings ArticleDOI
C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE
Hisao Shigematsu,Y. Inoue,Akihiko Akasegawa,Masao Yamada,S. Masuda,Y. Kamada,Atsushi Yamada,Masahito Kanamura,Toshihiro Ohki,Kozo Makiyama,Naoya Okamoto,Kenji Imanishi,Toshihide Kikkawa,Kazukiyo Joshin,Naoki Hara +14 more
TL;DR: In this paper, the authors reported a C-band power amplifier with over 340W output power using 0.8-µm GaN-HEMTs and an X-band Power Amplifier with over 100-W output output power with 0.25-1/4-μm HEMTs.
Journal ArticleDOI
Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs
Yuichi Minoura,Toshihiro Ohki,Naoya Okamoto,Atsushi Yamada,Kozo Makiyama,Junji Kotani,Shiro Ozaki,Masaru Sato,Norikazu Nakamura +8 more
Journal ArticleDOI
Direct observation of nanometer‐scale gate leakage paths in AlGaN/GaN and InAlN/AlN/GaN HEMT structures
TL;DR: In this paper, the effects of MOVPE growth parameters on the gate leakage characteristics of InAlN HEMT structures and compares leakage current paths in AlGaN and InAln HEMTs on a nanometer scale.