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Shuang Kong
Researcher at Dalian Institute of Chemical Physics
Publications - 11
Citations - 361
Shuang Kong is an academic researcher from Dalian Institute of Chemical Physics. The author has contributed to research in topics: Thermoelectric materials & Thermoelectric effect. The author has an hindex of 7, co-authored 8 publications receiving 159 citations. Previous affiliations of Shuang Kong include Chinese Academy of Sciences.
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Journal ArticleDOI
Enhancing the stability of cobalt spinel oxide towards sustainable oxygen evolution in acid
Ailong Li,Shuang Kong,Chenxi Guo,Hideshi Ooka,Kiyohiro Adachi,Daisuke Hashizume,Qike Jiang,Hongxian Han,Jianping Xiao,Ryuhei Nakamura +9 more
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Dramatically enhanced thermoelectric performance of MoS2 by introducing MoO2 nanoinclusions
Shuang Kong,Shuang Kong,Tianmin Wu,Min Yuan,Min Yuan,Zhiwei Huang,Zhiwei Huang,Qing-Long Meng,Qike Jiang,Wei Zhuang,Peng Jiang,Xinhe Bao +11 more
TL;DR: In this article, an oxygen doping strategy was proposed to improve the thermoelectric efficiency of two-dimensional transition-metal dichalcogenide semiconductors (TMDCs).
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Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition
Heng-Chang Liu,Yuanhu Zhu,Qing-Long Meng,Xiaowei Lu,Shuang Kong,Zhiwei Huang,Peng Jiang,Xinhe Bao,Xinhe Bao +8 more
TL;DR: In this article, a modified chemical vapor deposition method was used to grow monolayer molybdenum disulfide (MoS2) and the quality of the MoS2 crystals could be improved by tuning the carrier gas flow rate during the heating stage.
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Simultaneous enhancement in the power factor and thermoelectric performance of copper sulfide by In2S3 doping
Qing-Long Meng,Shuang Kong,Shuang Kong,Zhiwei Huang,Zhiwei Huang,Yuanhu Zhu,Heng-Chang Liu,Heng-Chang Liu,Xiaowei Lu,Xiaowei Lu,Peng Jiang,Xinhe Bao +11 more
TL;DR: In this paper, the authors demonstrate simultaneous enhancement of the power factor and thermoelectric performance of Cu2S upon the introduction of In2S3, which leads to a high power factor of 1361 μW m−1 K−2 at 850 K.
Journal ArticleDOI
Realizing p-Type MoS2 with Enhanced Thermoelectric Performance by Embedding VMo2S4 Nanoinclusions.
TL;DR: VMo2S4 nanoinclusions, confirmed by X-ray powder diffraction (XRD) and transmission electron microscopy (TEM) measurements, not only improve the electrical conductivity by simultaneously increasing the carrier concentration and the mobility but also result in the reduction of lattice thermal Conductivity by enhancing the interface phonon scattering.