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Shubham Jain

Researcher at Purdue University

Publications -  29
Citations -  944

Shubham Jain is an academic researcher from Purdue University. The author has contributed to research in topics: Crossbar switch & Artificial neural network. The author has an hindex of 12, co-authored 29 publications receiving 518 citations. Previous affiliations of Shubham Jain include IBM.

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Computing in Memory With Spin-Transfer Torque Magnetic RAM

TL;DR: In this article, the spin-transfer torque compute-in-memory (STT-CiM) was proposed for in-memory computing with spin transfer torque magnetic RAM, which allows multiple wordlines within an array to be simultaneously enabled, allowing for directly sensing functions of the values stored in multiple rows using a single access.
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Computing in Memory with Spin-Transfer Torque Magnetic RAM

TL;DR: This work addresses the challenge of reliable in-memory computing under process variations by extending error-correction code schemes to detect and correct errors that occur during CiM operations and proposes architectural enhancements to processor instruction sets and on-chip buses that enable STT-CiM to be utilized as a scratchpad memory.
Journal ArticleDOI

Resistive Crossbars as Approximate Hardware Building Blocks for Machine Learning: Opportunities and Challenges

TL;DR: This work describes the design principles of resistive crossbars, including the devices and associated circuits that constitute them, and discusses intrinsic approximations arising from the device and circuit characteristics and study their functional impact on the MVM operation.
Journal ArticleDOI

RxNN: A Framework for Evaluating Deep Neural Networks on Resistive Crossbars

TL;DR: In this article, a fast and accurate simulation framework is presented to evaluate large-scale DNNs on resistive crossbar systems, where the computations involved in each DNN layer are mapped into crossbar operations, and evaluated them using a fast crossbar model (FCM) that accurately captures the errors arising due to crossbar nonidealities while being four to five orders of magnitude faster than circuit simulation.