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Shungo Natsui

Researcher at Tohoku University

Publications -  137
Citations -  2328

Shungo Natsui is an academic researcher from Tohoku University. The author has contributed to research in topics: Anodizing & Blast furnace. The author has an hindex of 23, co-authored 127 publications receiving 1838 citations. Previous affiliations of Shungo Natsui include Hokkaido University.

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Recent Progress and Future Perspective on Mathematical Modeling of Blast Furnace

TL;DR: In this paper, the development of advanced mathematical models of blast furnace like DEM (Discrete Element Method) has attracted a special attention in ironmaking field, and the combined model of DEM with the continuum model is under development for the purpose of the accurate understanding of inner state of blast furnaces.
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Rapid fabrication of self-ordered porous alumina with 10-/sub-10-nm-scale nanostructures by selenic acid anodizing

TL;DR: This study reports a new self-ordered nanoporous alumina formed by selenic acid (H2SeO4) anodizing without any special electrochemical equipment that can be used as a nanotemplate for various nanostructures in 10-/sub-10-nm-scale manufacturing.
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Fabrication of Self-Ordered Porous Alumina via Etidronic Acid Anodizing and Structural Color Generation from Submicrometer-Scale Dimple Array

TL;DR: In this paper, high-purity aluminum specimens were anodized in a 0.3-M etidronic acid solution under constant current density and voltage conditions, and periodic nanostructures measuring 530 to 670 nm in cell diameter were fabricated on the aluminum substrate.
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Self-Ordering Behavior of Anodic Porous Alumina via Selenic Acid Anodizing

TL;DR: In this article, the self-ordering behavior of anodic porous alumina that was formed by anodizing in selenic acid electrolyte (H2SeO4) at various concentrations and voltages was investigated with SEM and AFM imaging.
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Self-ordered Porous Alumina Fabricated via Phosphonic Acid Anodizing

TL;DR: In this article, a double-layered porous alumina consisting of a thick outer layer containing incorporated HPO32− anions, and a thin inner layer without anions was constructed via phosphonic acid anodizing.