S
Soo-Hong Jeong
Researcher at Photronics, Inc.
Publications - 15
Citations - 45
Soo-Hong Jeong is an academic researcher from Photronics, Inc.. The author has contributed to research in topics: Dry etching & Photomask. The author has an hindex of 4, co-authored 15 publications receiving 45 citations.
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Proceedings ArticleDOI
Loading effect parameters of dry etcher system and their analysis in mask-to-mask loading and within-mask loading
TL;DR: In this article, the authors have evaluated the effect of within-mask and mask-to-mask loading on the Cr etch rate and selectivity at various process conditions and relations between parameters of dry etch process and Cr loading were evaluated.
Proceedings ArticleDOI
Dry etching of Cr layer and its loading effect
Hyuk-Joo Kwon,Dong-Soo Min,Pil-Jin Jang,Byung-Soo Chang,Boo-Yeon Choi,Kyung-Ho Park,Soo-Hong Jeong +6 more
TL;DR: In this paper, a phenomenological approach was proposed for the loading effect by some simplified equations, which was evaluated for the masks fabricated at the same process condition with the different mask-to-mask Cr loading and different within-mask CR loading.
Proceedings ArticleDOI
Applications of MICP source for next-generation photomask process
TL;DR: In this paper, a dry etcher system with multi-pole inductively coupled plasma (ICP) source for Cr etch and MoSi etch was used to improve critical dimension uniformity, edge roughness, macro loading effect and pattern slope.
Proceedings ArticleDOI
Optimum PEC Conditions Under Resist Heating Effect Reduction for 90nm Node Mask Writing
Eu Sang Park,Jong-Hwa Lee,Dong-Il Park,Woo Gun Jeong,Soon Kyu Seo,Jin-Min Kim,Sang-Soo Choi,Soo-Hong Jeong +7 more
TL;DR: In this article, the dependence of CD variation on e-beam write conditions was investigated under optimum PEC parameter conditions, such as current density, shot size, number of writing passes, and settling time, to see their affects on resist heating.
Dry etching technology of Cr and MoSi layers using high-density plasma source
TL;DR: In this article, a dry etcher system for photomask process utilized the new plasma source and process optimizations have been done for CD (critical dimension) uniformity and loading effects, the 3 σ of CD uniformity of Cr pattern, with 132 × 132 mm 2 area and 11 x 11 pattern arrays, was obtained below 10 nm, where the target CD is 0.8 um clear pattern.