Photronics, Inc.

About: Photronics, Inc. is a company organization based out in Brookfield, Wisconsin, United States. It is known for research contribution in the topics: Photomask & Lithography. The organization has 298 authors who have published 343 publications receiving 2654 citations.

Fiber bragg gratings made with a phase mask and 800-nm femtosecond radiation.

Abstract: High-quality retroreflecting fiber Bragg gratings were written in standard Ge-doped telecom fiber (Corning SMF-28) after a few minutes exposure with pulsed 800-nm, 120-fs laser radiation by use of a deep-etch silica zero-order nulled phase mask optimized for 800 nm. Induced index modulations of 1.9×10-3 were achieved with peak power intensities of 1.2×1013 W/cm2 without any fiber sensitization. The fiber gratings are stable and did not erase after 2 weeks at 300 °C. The primary mechanism of induced index change results from a structural modification to the fiber core.

Bragg gratings written in all-SiO/sub 2/ and Ge-doped core fibers with 800-nm femtosecond radiation and a phase mask

Abstract: Femtosecond laser pulses at 800 nm and 120 fs were used to fabricate high-quality retroreflecting fiber Bragg gratings in standard Ge-doped telecom fiber (Corning SMF-28) and all-silica-core Fluorine doped cladding single-mode fiber using a deep-etch silica zero-order nulled phase mask. Induced index modulations of 1.9/spl times/10/sup -3/ were achieved with peak power intensities of 2.9/spl times/10/sup 12/ W/cm/sup 2/ without any fiber sensitization such as hydrogen loading. The fiber gratings have annealing characteristics similar to type II damage fiber gratings and demonstrate stable operation at temperatures as high as 950/spl deg/C. The grating devices exhibit low polarization dependence. The primary mechanism of induced index change results from a structural modification to the fiber core.

Analyzing the tolerance and controls on Critical Dimensions and overlays as prescribed by the National Technology Roadmap for semiconductors

Abstract: Continued demands on shrinking features with tighter tolerance on Critical Dimensions (CDs) and overlays are placing stringent requirements on parameters that are essentially the building blocks of the metrologies for CDs and overlays. This paper conducts a reality check on the precision and error budgets assigned to CD and overlay controls by the National Technology Roadmap for Semiconductors in light of constraints on parameters that are fundamental to the above measurements.© (1997) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Subtractive color processing system for digital imaging

Abstract: Improved methods and apparatus for digital focal plane array (FPA)—based color imaging include the step of sampling an image, using an FPA camera equipped with a color filter array (CFA) to obtain a value at each pixel position, thereby creating a set of values sampled on a per-pixel basis. Single-color cyan, yellow and white (CYW) color planes are generated from the set of sampled pixel values. Interpolates among and between the color plane values is executed to “fill in” the “gaps” in the individual color planes, and the interpolated CYW values from the single-color planes are transformed into RGB values which can be stored, transmitted, or utilized to drive a conventional video monitor or color printing device. Filtering and other post-interpolation steps are executed to reduce color aliasing, and the white plane is used to introduce high frequency content back into the filtered color image. In one practice of the invention, the CYW values are transformed into CIELAB color space values. The interpolated W plane is used to calculate L* values, and C, Y, and W planes are used to calculate a* and b* values. The a* and b* planes are filtered using a window with weighting coefficients, and the CIELAB color space values are then transformed to red, green, and blue color planes using a color look-up table (LUT). In this case, the luminance of each pixel is directly related to the W plane value at that pixel location.

Disposable hard mask for photomask plasma etching

Abstract: A method for creating a photomask which includes a layer of hard mask material the inclusion of which improves the uniformity of critical dimensions on the photomask by minimizing the affect of macro and micro loading. The method for producing the photomask of the instant invention includes two etching processes. The first etching process etches the layer of hard mask, and the second etching process etches the anti-reflective material and opaque material.