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Stefan Fält

Researcher at ETH Zurich

Publications -  12
Citations -  2026

Stefan Fält is an academic researcher from ETH Zurich. The author has contributed to research in topics: Quantum dot & Qubit. The author has an hindex of 7, co-authored 12 publications receiving 1902 citations. Previous affiliations of Stefan Fält include École Polytechnique Fédérale de Lausanne.

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Quantum nature of a strongly coupled single quantum dot–cavity system

TL;DR: Observations unequivocally show that quantum information tasks are achievable in solid-state cavity QED by observing quantum correlations in photoluminescence from a photonic crystal nanocavity interacting with one, and only one, quantum dot located precisely at the cavity electric field maximum.
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Conditional dynamics of interacting quantum dots.

TL;DR: This work demonstrates conditional dynamics for two coupled quantum dots, whereby the probability that one quantum dot makes a transition to an optically excited state is controlled by the presence or absence of an optical excitation in the neighboring dot.
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Observation of dressed excitonic states in a single quantum dot.

TL;DR: It is demonstrated that the anisotropic electron-hole exchange interaction induced splitting between the x- and y-polarized excitonic states can be completely erased by using the ac-Stark effect induced by the coupling field, without causing any appreciable broadening of the spectral lines.
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Realization of a Cascaded Quantum System: Heralded Absorption of a Single Photon Qubit by a Single-Electron Charged Quantum Dot.

TL;DR: This work demonstrates the heralded absorption of a single photonic qubit, generated by a single neutral quantum dot, by asingle-electron charged quantum dot that is located 5 m away and shows that this process can be combined with local operations optically performed on the destination node by measuring classical correlations between the absorbed photon color and the final state of the electron spin.
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Scattering mechanisms of highest-mobility InAs /Al x Ga 1 -x Sb quantum wells

TL;DR: In this paper, the authors studied molecular beam epitaxially grown undoped InAs/AlSb quantum well devices with different buffer and barrier designs and varying quantum well width.