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Stefan Hengesbach

Researcher at RWTH Aachen University

Publications -  20
Citations -  169

Stefan Hengesbach is an academic researcher from RWTH Aachen University. The author has contributed to research in topics: Laser & Semiconductor laser theory. The author has an hindex of 7, co-authored 19 publications receiving 157 citations.

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Proceedings ArticleDOI

Brightness and average power as driver for advancements in diode lasers and their applications

TL;DR: In this article, a new generation of vertical emitting diode laser (VCSELs) made significant progress and provided easy scalable output power in the kW range, which can be used for direct materials processing substituting other laser types like CO2 lasers and lamp pumped solid state lasers.
Journal ArticleDOI

Simulation of spectral stabilization of high-power broad-area edge emitting semiconductor lasers

TL;DR: The simulation of spectral stabilization of broad-area edge-emitting semiconductor diode lasers is presented and the focus of the model lies on the prediction of influences on the spectrum and power characteristics by frequency selective feedback from external optical resonators.
Proceedings ArticleDOI

Low-loss smile-insensitive external frequency-stabilization of high power diode lasers enabled by vertical designs with extremely low divergence angle and high efficiency

TL;DR: In this paper, the authors showed that VHG-stabilized ELOD-based diode lasers have significantly lower loss and larger operation windows than conventional diode laser designs in the collimated feedback regimes, even in the presence of significant (≥ 1 μm) bar smile.
Journal ArticleDOI

High-power dense wavelength division multiplexing of multimode diode laser radiation based on volume Bragg gratings

TL;DR: A dense wavelength division multiplexer based on volume Bragg gratings (VBGs) with a channel spacing of Δλ = 1.5 nm is presented, which constrict the spectral bandwidth of passively cooled multimode diode laser bars with 19 broad-area emitters to δλ95% = 120 pm.
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High-Power Diode Lasers Optimized for Low-Loss Smile-Insensitive External Spectral Stabilization

TL;DR: In this article, the authors compared the influence of diode laser design on stabilization performance by comparing devices with super large optical waveguides (4.8 μm) and narrow vertical far fields with reference designs with thinner waveguiders (1.6 μm).