G. Erbert

TL;DR: In this paper, a review of efforts to increase ηE is presented and it is shown that for well-optimized structures, the residual losses are dominated by the p-side waveguide and nonideal internal quantum efficiency.

TL;DR: In this article, a two-stage process consisting of removal of thermodynamically unstable species and facet sealing with a passivation layer is proposed for the passivation of mirror facets of Al-free active region high-power semiconductor diode lasers.

TL;DR: In this paper, a high-power quantum well laser with high brightness in the spectral range between 650 nm and 1080 nm was presented, with a narrow vertical far-field divergence down to angles of 15 degrees.

TL;DR: The operation of a low threshold femtosecond Yb:KYW laser is demonstrated, using a saturable absorber mirror for passive mode-locking and a high brightness laser diode as pumping source to achieve Fourier-limited pulses.

TL;DR: In this article, the authors investigated the factors that limit both the continuous wave (CW) and the pulsed output power of broad-area laser diodes driven at very high currents and showed that the decrease in the gain due to self-heating under CW operation and spectral hole burning under pulsed operation, as well as heterobarrier carrier leakage and longitudinal spatial hole burning, are the dominant mechanisms limiting the maximum achievable output power.