A method and system for providing a microelectric device, such as a magnetoresistive read sensor are described. The method and system include providing a mask layer on the microelectric device. The method and system further include exposing the mask layer to provide a mask. A portion of the mask covers a portion of the microelectric device. The step of exposing the mask layer further includes utilizing a chromeless alt-phase shift mask for providing the portion of the mask.

Method and system for providing a structure in a microelectronic device using a chromeless alternating phase shift mask

Die vorliegende Erfindung betrifft eine lithographische Maske, die mindestens eine erste Schicht (31) mit Graben (33) und eine zweite Schicht (32) aufweist. Die zweite Schicht (32) hat Abschnitte (321) und eine Gebiete (322), in der zweiten Schicht (32) umschliesende, grabenartige, transparente Struktur (200) und wirkt beim Atzen der Graben (33) in die erste Schicht (31) als Maske. Die erste und die zweite Schicht (31, 32) sind so ausgefuhrt, dass elektrische Potentialdifferenzen in der zweiten Schicht (32) verringert oder nicht vorhanden sind.

Lithographische Maske und Verfahren zur Herstellung der lithographischen Maske

The device (10) has a driver (14) of a window lifter and the first and second clamping means (16,18). In each case the clamping surfaces (20) extends at a distance to the clamping axis (28) and these clamping surfaces are partly ring shaped. The clamping surfaces cover the clamping axis in the ring shape particularly in the form of the annulus.

Device for detachable connection of displaceable windowpane of motor vehicle has clamping surfaces which extends at distance to clamping axis and these clamping surfaces are partly ring shaped

A photomask used for manufacturing a semiconductor device includes a substrate; and one or more layers disposed over the substrate, the one or more layers defining a full field area and a reduced field area with a primary pattern being formed in the reduced field area, wherein the full field area is defined by a width of at least 90 mm and a height of at least 100 mm, and the reduced field area is defined by a width within the range of approximately 20-80 mm and a height within the range of approximately 20-80 mm, a center point of the primary patterned area being spaced a predetermined distance from a center point of the photomask so that the primary patterned area avoids photomask defects.

Photomask having a reduced field size and method of using the same

PROBLEM TO BE SOLVED: To solve such a problem that when a pattern arranged at the inside or the outside of barrier structure is manufactured, etching is performed at different rates caused by different charge states of different regions being insulated each other. SOLUTION: This lithography mask includes a first layer 31 including a groove, a second layer 32 including regions, sections, and groove shaped transparent structure surrounding the sections, wherein the first layer 31 and the second layer 32 are formed so as to decrease difference of electric potentials generated in the second layer 32. COPYRIGHT: (C)2011,JPO&INPIT

Lithography mask, and manufacturing method of lithography mask

The invention relates to a method for the production of masks, in particular for the production of alternating phase shift masks (1), or of chromeless phase shift masks or phase shift masks structured by quartz etching, respectively, as well as to a mask (1), in particular photomask, for the production of semiconductor devices, comprising at least one product field area (6 a) and a compensation structure (5) positioned outside the product field area (6 a), wherein the compensation structure (5) comprises at least one electroconductive region (8 b) that is electrically connected with the product field area (6 a).

Photomask, in particular alternating phase shift mask, with compensation structure

A mask, especially a photo-mask for semiconductor device production comprises at least a product field region (6a) with a compensation structure outside this which at least comprises an electrically conductive region (8a,b) connected to the product field region, preferably by a rail of breadth especially between 5 and 25 microns. An Independent claim is also included for a mask production process for the above.

Photo mask especially alternating phase mask and production process for semiconductor devices has product field region electrically connected to a surrounding compensation structure

Stephen Dr. Rahn

Papers

Photomask, in particular alternating phase shift mask, with compensation structure

Photo mask especially alternating phase mask and production process for semiconductor devices has product field region electrically connected to a surrounding compensation structure