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Stephen M. Foiles

Researcher at Sandia National Laboratories

Publications -  186
Citations -  14302

Stephen M. Foiles is an academic researcher from Sandia National Laboratories. The author has contributed to research in topics: Grain boundary & Dislocation. The author has an hindex of 51, co-authored 186 publications receiving 12780 citations. Previous affiliations of Stephen M. Foiles include Max Planck Society & Cornell University.

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Embedded-atom-method functions for the fcc metals Cu, Ag, Au, Ni, Pd, Pt, and their alloys.

TL;DR: A consistent set of embedding functions and pair interactions for use with the embedded-atom method was determined empirically by fitting to the sublimation energy, equilibrium lattice constant, elastic constants, and vacancy-formation energies of the pure metals and the heats of solution of the binary alloys as discussed by the authors.
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The embedded-atom method: a review of theory and applications

TL;DR: The embedded-atom method (EAM) as mentioned in this paper is a semi-empirical method for performing calculations of defects in metals, and it has been shown to provide a very useful and robust means of calculating approximate structure and energetics.
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Survey of computed grain boundary properties in face-centered cubic metals: I. Grain boundary energy

TL;DR: The absolute grain boundary mobility of 388 nickel grain boundaries was calculated using a synthetic driving force molecular dynamics method; complete results appear in the Supplementary materials as discussed by the authors. But the authors did not consider the effect of boundary mobility on grain boundary roughening.
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Spectral neighbor analysis method for automated generation of quantum-accurate interatomic potentials

TL;DR: Results for a SNAP potential for tantalum are presented, showing that it accurately reproduces a range of commonly calculated properties of both the crystalline solid and the liquid phases.
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Surface Step Effects on Nanoindentation

TL;DR: A new metric, the slip vector, shows material slip coinciding with the <112> directions of a lowest unstable stacking fault barrier, which is shown to be a good dislocation nucleation criterion.