S
Steven Francis Leboeuf
Researcher at General Electric
Publications - 69
Citations - 3080
Steven Francis Leboeuf is an academic researcher from General Electric. The author has contributed to research in topics: Light-emitting diode & Gallium nitride. The author has an hindex of 28, co-authored 69 publications receiving 3032 citations. Previous affiliations of Steven Francis Leboeuf include Momentive & Lockheed Martin Corporation.
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Patent
Homoepitaxial gallium-nitride-based light emitting device and method for producing
TL;DR: In this article, a method of making a light emitting device is presented, where a GaN single crystal has a dislocation density of less than 104 per cm2 and an optical absorption coefficient below about 100 cm−1 at wavelengths between 700 and 465 nm.
Journal ArticleDOI
Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes
Xian-An Cao,Edward B. Stokes,Peter Micah Sandvik,Steven Francis Leboeuf,James W. Kretchmer,D. Walker +5 more
TL;DR: In this paper, the authors studied the electrical characteristics and optical properties of GaN/InGaN multiple quantum well (MQW) light-emitting diodes (LEDs) grown by metalorganic chemical vapor deposition.
Patent
High efficiency inorganic nanorod-enhanced photovoltaic devices
Loucas Tsakalakos,Ji Ung Lee,Charles Steven Korman,Steven Francis Leboeuf,Abasifreke Ebong,Robert John Wojnarowski,Alok Mani Srivastava,Oleg Sulima +7 more
TL;DR: In this paper, the authors proposed photovoltaic devices comprising nanostructured materials, which are either 1-dimensional or branched structures, where such structures are used to enhance the efficiency of the photovelectric device, particularly for solar cell applications.
Patent
Gallium nitride crystals and wafers and method of making
Mark P. D'Evelyn,Dong-Sil Park,Steven Francis Leboeuf,Larry B. Rowland,Kristi Jean Narang,Huicong Hong,Stephen Daley Arthur,Peter Micah Sandvik +7 more
TL;DR: A GaN crystal having up to about 5 mole percent of at least one of aluminum, indium, and combinations thereof is described in this paper, where one grain has a diameter greater than 2 mm and a dislocation density less than about 104 cm−2.
Patent
Resonant cavity light emitting devices and associated method
Mark P. D'Evelyn,Xian-An Cao,Anping Zhang,Steven Francis Leboeuf,Huicong Hong,Dong-Sil Park,Kristi Jean Narang +6 more
TL;DR: In this paper, the authors proposed a method to produce a resonant cavity light emitting device using a seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid.