J
James W. Kretchmer
Researcher at General Electric
Publications - 68
Citations - 2148
James W. Kretchmer is an academic researcher from General Electric. The author has contributed to research in topics: Silicon carbide & Diode. The author has an hindex of 25, co-authored 68 publications receiving 2104 citations. Previous affiliations of James W. Kretchmer include Lockheed Martin Corporation.
Papers
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Journal ArticleDOI
Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes
Xian-An Cao,Edward B. Stokes,Peter Micah Sandvik,Steven Francis Leboeuf,James W. Kretchmer,D. Walker +5 more
TL;DR: In this paper, the authors studied the electrical characteristics and optical properties of GaN/InGaN multiple quantum well (MQW) light-emitting diodes (LEDs) grown by metalorganic chemical vapor deposition.
Journal ArticleDOI
Silicon carbide UV photodiodes
D.M. Brown,E. Downey,Mario Ghezzo,James W. Kretchmer,Richard Joseph Saia,Y.S. Liu,J.A. Edmond,G. Gati,J.M. Pimbley,W.E. Schneider +9 more
TL;DR: SiC photodiodes were fabricated using 6 H single-crystal wafers as discussed by the authors, which have excellent UV responsivity characteristics and very low dark current even at elevated temperatures.
A Comparative Evaluation of New Silicon Carbide Diodes and State-of-the-Art Silicon Diodes for Power Electronic Applications
Ahmed Elasser,Mustansir H. Kheraluwala,Mario Ghezzo,Robert Louis Steigerwald,Nicole Krishnamurthy,James W. Kretchmer,T.P. Chow +6 more
TL;DR: In this article, the effect of diode reverse recovery on the turn-on losses of a fast WARP/sup TM/IGBT was compared with state-of-the-art silicon diodes.
Proceedings ArticleDOI
A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications
Ahmed Elasser,Mustansir H. Kheraluwala,Mario Ghezzo,Robert Louis Steigerwald,Nicole Krishnamurthy,James W. Kretchmer,T.P. Chow +6 more
TL;DR: In this article, the effect of diode reverse recovery on the turn-on losses of a fast WARP/sup TM/IGBT was studied both at room temperature and at 150/spl deg/C.
Journal ArticleDOI
Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates
Xian-An Cao,Steven Francis Leboeuf,Mark Philip D'evelyn,S. D. Arthur,James W. Kretchmer,C. H. Yan,Z. H. Yang +6 more
TL;DR: In this article, the densities of surface and bulk defects in homoepitaxially grown LEDs were substantially reduced, leading to a decrease in reverse currents by more than six orders of magnitude.