An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

This invention discloses a three-dimensional, high density package for integrated circuits for which integrated circuits are placed onto substrate layers and then stacked together. Techniques for interconnecting the layers to one another and for connecting the layers to external circuitry are also disclosed. Techniques for cooling the stack with heat sinks or fluid flow are also disclosed.

Three dimensional integrated circuit package

A Pachinko bonus game system for an underlying game machine. The Pachinko bonus game has a playing field with a plurality of rows of pegs. A ball is launched onto the playing field by a launch mechanism when an initiate condition occurs during play of the underlying game. A row of lanes are provided on the playing field. The ball, after traversing among the pegs on the playing field, eventually travels through one of the lanes. At each lane is randomly displayed a bonus payoff value. The lane the ball travels through senses the presence of the ball and the value displayed for that lane is added to the credit meter in the underlying game. The bonus payoff values are randomly changed from game to game which eliminates any mechanical bias present in the Pachinko game. A stand-alone Pachinko game as well as using a Pachinko game as a coin dispenser is also provided.

Pachinko stand-alone and bonusing game

Semiconductor chip assemblies incorporating flexible, sheet-like elements having terminals thereon overlying the front or rear face of the chip to provide a compact unit. The terminals on the sheet-like element are movable with respect to the chip, so as to compensate for thermal expansion. A resilient element such as a compliant layer interposed between the chip and terminals permits independent movement of the individual terminals toward the chip driving engagement with a test probe assembly so as to permit reliable engagement despite tolerances.

Semiconductor chip assemblies, methods of making same and components for same

A probe card assembly includes a probe card, a space transformer having resilient contact structures (probe elements) mounted directly to (i.e., without the need for additional connecting wires or the like) and extending from terminals on a surface thereof, and an interposer disposed between the space transformer and the probe card. The space transformer and interposer are “stacked up” so that the orientation of the space transformer, hence the orientation of the tips of the probe elements, can be adjusted without changing the orientation of the probe card. Suitable mechanisms for adjusting the orientation of the space transformer, and for determining what adjustments to make, are disclosed. The interposer has resilient contact structures extending from both the top and bottom surfaces thereof, and ensures that electrical connections are maintained between the space transformer and the probe card throughout the space transformer's range of adjustment, by virtue of the interposer's inherent compliance. Multiple die sites on a semiconductor wafer are readily probed using the disclosed techniques, and the probe elements can be arranged to optimize probing of an entire wafer. Composite interconnection elements having a relatively soft core overcoated by a relatively hard shell, as the resilient contact structures are described.

Probe card assembly and kit, and methods of making same

High Performance Semiconductor Package Assembly Abstract An improved high performance semiconductor package assembly for interconnecting a plurality of integrated circuit devices having a multilayer sub-strate with internal wiring including signal wiring and external signal and power connections, a plurality of integrated circuit semiconductor devices supported on the top surface of the substrate in electrically connected operative relation, the improvement being a power supply distribution system for providing electrical supply voltages to the devices from the power connections consisting of radial waveguide structure including parallel waveguide planes with a low input impedence to reduce switching noise, the waveguide planes located between the signal fan-out wiring and internal wiring metallurgy and connected in common to all of the plurality of devices.

High performance semiconductor package assembly

In the fabrication of semiconductor integrated circuits, a method is provided for forming a self-supporting silicon mask and a further method is provided for utiliziing such a self-supporting separable silicon mask to perform various masking steps in the integrated circuit fabrication. The mask is formed by forming, at a surface of a planar silicon substrate, a silicon layer having a higher concentration of conductivity-determining impurities than the substrate beneath the layer, applying to selected portions of the other surface of the substrate an etchant which preferentially etches silicon having lower concentrations of conductivity-determining impurities to thus etch out preferentially selected portions of the substrate to form at least one recess extending through the substrate to said silicon layer, and then etching from the surface of said silicon layer opposite the substrate recess to form patterns of openings extending through the silicon layer to said substrate recess. The seperable self-supporting silicon mask thus formed is then placed on the surface of an integrated semiconductor circuit member so that the opposite surface of the silicon layer interfaces with the integrated circuit member surface. Then, the masked semiconductor member may be subjectd to any conventional integrated circuit fabrication step which alters the characteristics of the portions of said member surface exposed in said pattern of mask openings; such fabrication steps include introduction of impurities, etching as well as lift-off deposition of metallic and non-metallic patterns. Upon the completion of the step or steps, the self-supporting silicon mask is separated from the integrated circuit member.

Method for making a silicon mask

PROCESS FOR FABRICATING DEVICES HAVING DIELECTRIC ISOLATION AND STRUCTURE. Abstract of the Disclosure A process for forming complete dielectrically isolated monocrystalline silicon regions on a substrate by depositing a first epitaxial silicon layer embodying an N-type impurity on a low resistivity silicon substrate embodying a P-type impurity, forming annular P-type impurity regions in the first epitaxial layer, depositing the second epitaxial layer embodying an N-type impurity on the first epitaxial layer, forming annular P-type impurity regions in the second epitaxial layer in registry with the annular regions in the first epitaxial layer, converting the silicon substrate and the annular P-type regions in the first and second epitaxial layers into porous silicon material by an anodic treatment carried out in an aqueous solution of hydrofluoric acid, and oxidizing the porous silicon material to form silicon oxide. A semiconductor structure having a backing substrate of silicon oxide with monocrystalline silicon islands embedded therein. A preferred embodiment includes low resistivity regions that extend through the substrate.

Process for fabricating devices having dielectric isolation utilizing anodic treatment and selective oxidation

An integrated circuit chip carrier with multi-level metallurgy, in which the effects of the metallurgy in causing elevation irregularitiies at the various levels of the structure are minimized, is produced by a method wherein a first plurality of levels of metallization patterns respectively separated by layers of dielectric material are first formed on a planar primary layer supported on a temporary substrate having a chemical etchability different from that of the layer. The primary layer is electrically insulative with respect to said metallization patterns. Then, a supporting layer is formed on the uppermost covering layer, after which the substrate is removed with a chemical etchant which preferentially etches the substrate away from the insulative layer. Next, an opposite plurality of levels of metallization patterns are formed on the side of the insulative layer opposite to the first formed metallization patterns. These opposite metallization patterns are also respectively separated by covering layers of dielectric material.

Integrated circuit chip carrier and method for forming the same

FABRICATING HIGH PERFORMANCE INTEGRATED BIPOLAR AND COMPLEMENTARY FIELD EFFECT TRANSISTORS ABSTRACT A method for making dielectrically isolated bipolar and field effect transistors in the same substrate and a semiconductor integrated circuit so-made. The method consists of forming a first region of one conductivity type in a monocrystalline semiconductor substrate on a first type, forming second and third regions having different diffusion rates in the substrate, forming a monocrystalline layer of the other conductivity type, adding impurity to the second region, depositing a dielectric layer over the monocrystalline layer, forming openings in the dielectric layer over the first and third regions and another location in the monocrystalline layer, and depositing a layer of silicon over the dielectric layer and the openings. The impurities in the third region are outdiffused into the monocrystalline region over it to form the channel region of a Field Effect transistor. The regions of the layer of silicon are dielectrically isolated from one another and emitter and base regions of a bipolar transistor are selec-tively formed in the monocrystalline region over subcollector regions. Source and drain regions for a field effect transistor are formed over the third region and the another location to form both channel types of field effect transistors.

Steven Magdo

Papers

High performance semiconductor package assembly

Method for making a silicon mask

Process for fabricating devices having dielectric isolation utilizing anodic treatment and selective oxidation

Integrated circuit chip carrier and method for forming the same

Fabricating high performance integrated bipolar and complementary field effect transistors