Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

A call forwarding service forwards calls placed to a subscriber's number to a forward-to number. Enabling an interface with the call forwarding service includes transmitting display data from a call forwarding service server through a packet switched data network to the subscriber's graphical user interface. At least a portion of the display data is displayed on a first screen of the graphical user interface, which includes a forward-to number field and at least one of multiple activation fields. The activation fields include a first activation indicator corresponding to the call forwarding service, a second activation indicator corresponding to the screening list and a third activation indicator corresponding to the schedule. Selection data is entered by the subscriber in response to the first screen, the selection data indicating one of an ON condition and an OFF condition corresponding to the at least one of the activation fields.

System and method for implementing and accessing call forwarding services

https://ir.nctu.edu.tw:443/bitstream/11536/30330/1/000087849500001.pdf

Progress in the developments of (Ba,Sr)TiO3 (BST) thin films for Gigabit era DRAMs

An improved exhaust system for a gas-phase reactor and a reactor and system including the exhaust system are disclosed. The exhaust system includes a channel fluidly coupled to an exhaust plenum. The improved exhaust system allows operation of a gas-phase reactor with desired flow characteristics while taking up relatively little space within a reaction chamber.

Gas-phase reactor and system having exhaust plenum and components thereof

A plasma etch reactor (20) includes a reactor chamber (22) with a grounded upper electrode (24), a lower electrode (28) which is attached to a high frequency power supply (30) and a low frequency power supply (32), and a peripheral electrode (26) which is located between the upper and lower electrode, and which is allowed to have a floating potential. Rare earth magnets (46, 47) are used to establish the magnetic field which confines the plasma developed within the reactor chamber (22). The plasma etch reactor (20) is capable of etching emerging films used with high density semiconductor devices.

Plasma etch reactor and method for emerging films

We have fabricated experimental memory cell arrays with a unit cell size of 0.29 /spl mu/m/sup 2/ (0.38 /spl mu/m/spl times/0.76 /spl mu/m). The layout was designed for a half-pitch 8F/sup 2/ cell with 0.14-/spl mu/m process technology, which is promising for 1-gigabit DRAMs and beyond. We developed three advanced technologies for this fabrication. Firstly, synchrotron radiation (SR) X-ray lithography was used to replicate ultra-fine patterns instead of optical lithography. Secondly, we introduced a simple stacked capacitor composed of a metal-organic chemical vapor deposition (MOCVD) grown (Ba,Sr)TiO/sub 3/ (BST) high-dielectric-constant film sandwiched by Ru-metal electrodes. Thirdly, we developed advanced etching techniques for the fine pattern fabrication using improved ECR discharged plasmas, which give less microloading effects.

Giga-bit scale DRAM cell with new simple Ru/(Ba,Sr)TiO/sub 3//Ru stacked capacitors using X-ray lithography

A method of making a X-ray mask including: a step of forming a X-ray absorber above a substrate; a step of controlling a stress of the X-ray absorber by a predetermined condition; and wherein the predetermined condition for controlling the stress of the X-ray absorber formed above the substrate is determined by a measured value of a stress of a X-ray absorber formed on a monitor substrate.

Method of making X-ray mask having reduced stress

An X-ray absorber is deposited on a membrane. A stress adjust step is applied so that the average film stress of the X-ray absorber is 0. After patterning the X-ray absorber, the position accuracy of the pattern is measured. Then, a stress adjust process is applied to the patterned X-ray mask. Accordingly, a stress adjustment method is used to acquire an X-ray mask that has no pattern position offset of the X-ray absorber.

Stress adjustment method of X-ray mask

The X-ray mask manufactured according to the present invention can solve a problem that the thin film stress of the X-ray absorber cannot be made to be zero although the mean thin film stress throughout the X-ray absorber can be made to be zero. The thin film stress distribution over the X-ray absorber 4 after the X-ray absorber 4 has been formed on a silicon substrate 1 is measured, and then inputs of electric power to heaters 9a, 9b and 9c of a hot plate 8 are changed so as to heat the X-ray absorber 4 to temperatures according to a specified temperature distribution with which the thin film stress throughout the X-ray absorber can be made to be zero.

Method of manufacturing X-ray mask and heating apparatus

An X-ray mask which is provided with an alignment mark and a transfer circuit pattern having a high position accuracy can be manufactured through a simplified manufacturing process. A membrane allowing passage of X-rays is formed on a substrate. A X-ray absorber intercepting transmission of X-rays is formed on the membrane. The substrate includes a window exposing the membrane. The X-ray absorber includes a transfer circuit pattern and an alignment mark formed in a region not overlapping with the window in a plan view.

Sunao Aya

Papers

Giga-bit scale DRAM cell with new simple Ru/(Ba,Sr)TiO/sub 3//Ru stacked capacitors using X-ray lithography

Method of making X-ray mask having reduced stress

Stress adjustment method of X-ray mask

Method of manufacturing X-ray mask and heating apparatus

X-ray mask provided with an alignment mark and method of manufacturing the same