T
Toshiyuki Oishi
Researcher at Mitsubishi
Publications - 72
Citations - 758
Toshiyuki Oishi is an academic researcher from Mitsubishi. The author has contributed to research in topics: Layer (electronics) & Field-effect transistor. The author has an hindex of 13, co-authored 72 publications receiving 727 citations.
Papers
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Patent
Semiconductor device and method of producing the same
TL;DR: In this paper, a dummy gate electrode is formed before the gate electrode, and a part of the extension regions diffused to a region immediately under the dummy gate is removed, and the removed part is filled with silicon selection epitaxial film.
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AlGaN Channel HEMT With Extremely High Breakdown Voltage
TL;DR: In this paper, a novel high-electron mobility transistor (HEMT) structure employing wider bandgap AlGaN for a channel layer, which is called Al-GaN channel HEMT, and investigated it.
Patent
Thin film forming apparatus using laser
Kenyu Haruta,Koichi Ono,Hitoshi Wakata,Mutsumi Tsuda,Yoshio Saito,Keisuke Nanba,Kazuyoshi Kojima,Tetsuya Takami,Akihiro Suzuki,Tomohiro Sasagawa,Kenichi Kuroda,Toshiyuki Oishi,Yukihiko Wada,Akihiko Furukawa,Yasuji Matsui,Akimasa Yuki,Takaaki Kawahara,Hideki Yabe,Taisuke Furukawa,Kouji Kise,Noboru Mikami,Tsuyoshi Horikawa,Tetsuro Makita,Kazuo Kuramoto,Naohiko Fujino,Hiroshi Kuroki,Tetsuo Ogama,Junji Tanimura +27 more
TL;DR: In this paper, a thin film forming apparatus using laser includes a chamber, a target (5) placed therein, a laser light source (10) for emitting laser beam to target(5), and a substrate holder (3).
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Isolation edge effect depending on gate length of MOSFETs with various isolation structures
TL;DR: In this paper, the gate length dependence of the isolation edge effect is investigated for MOSFETs with various isolation structures, including shallow trench isolation and local oxidation of silicon isolation.
Journal ArticleDOI
Effects of interfacial thin metal layer for high-performance Pt-Au-based Schottky contacts to AlGaN-GaN
TL;DR: In this paper, Ni-Ti-Pt-Au Schottky electrodes on AlGaN-GaN heterostructures were fabricated and subjected to rapid thermal annealing.