The authors reported on investigation of the thermal conductivity of graphene suspended across trenches in Si∕SiO2 wafer. The measurements were performed using a noncontact technique based on micro-Raman spectroscopy. The amount of power dissipated in graphene and corresponding temperature rise were determined from the spectral position and integrated intensity of graphene’s G mode. The extremely high thermal conductivity in the range of ∼3080–5150W∕mK and phonon mean free path of ∼775nm near room temperature were extracted for a set of graphene flakes. The obtained results suggest graphene’s applications as thermal management material in future nanoelectronic circuits.

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Extremely high thermal conductivity of graphene: Prospects for thermal management applications in nanoelectronic circuits

This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates for use in various medical devices, as well as methods and uses for such substrates and medical devices. In one particular embodiment, methods for enhancing cellular functions on a surface of a medical device implant are disclosed which generally comprise providing a medical device implant comprising a plurality of nanofibers (e.g., nanowires) thereon and exposing the medical device implant to cells such as osteoblasts.

Medical device applications of nanostructured surfaces

Lead-free soldering has emerged as one of the key technologies for assembling in environmental-conscious electronics. Among several candidate alloys, the Sn–Ag–Cu alloy family is believed to be the first choice with the combination of other alloys such as Sn–Zn–Bi, Sn–Cu and Sn–Bi–Ag. Phase diagrams of lead-free alloy systems have been intensively examined by using careful thermal and microstructural analysis combined with the thermodynamic calculation such as the CLAPHAD method. The Cu6Sn5/Cu3Sn layers are formed at most lead-free solder alloy/Cu interfaces, while Cu–Zn compound layers are formed in the Sn–Zn/Cu system. Growth kinetics of intermetallic layers both in solid-state and in soldering are also discussed. Creep and fatigue phenomena are also reviewed. In many aspects of lead-free soldering, much more work is required to establish a sound scientific basis to promote their applications.

Advances in lead-free electronics soldering

The disclosure relates to devices and methods for implantation of an orthopedic device between skeletal segments using limited surgical dissection. The implanted devices are used to adjust and maintain the spatial relationship(s) of adjacent bones. Depending on the implant design, the motion between the skeletal segments may be increased, limited, modified, or completely immobilized.

Devices and methods for inter-vertebral orthopedic device placement

The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

Nanoscale wires and related devices

An improved process for fabricating nanotube field emitter structures is provided, in which the nanotubes protrude from a supporting base material to improve emission properties. The resulting emitter structure are useful in a variety of devices, including microwave vacuum tube devices and flat-panel, field-emission displays. To attain the protruding nanotube emitter structure, according to one embodiment of the invention, nanotubes and metal particles are mixed and consolidated into a compact, and the compact is then sectioned to expose a substantial number of nanotube ends. A layer of the metal is selectively etched from the sectioned surface, leaving the exposed nanotubes protruding from the surface. The extent of protrusion is at least twice the average diameter of the nanotubes, advantageously at least ten times the average diameter of the nanotubes.

Article comprising enhanced nanotube emitter structure and process for fabricating article

In accordance with the invention, an improved conductive nanostructure assembly comprises an array of metallized nanostructures disposed on a conductive substrate. The substrate can also be metallized. Such assemblies provide continuous electron transport from the substrate to the tips of the nanostructures. Several ways of making such assemblies are described along with several devices employing the assemblies.

Field emitting device comprising metallized nanostructures and method for making the same

Nano-sized, nonreacting, noncoarsening oxide dispersoids have been incorporated into solder alloys to create a new, improved solder structure with an ultrafine grain size of ∼200–500 nm. The new solders exhibit significantly enhanced creep resistance combined with increased strength. The well-known thermal instability problem with ultrafine-grained structure appears to have been overcome in these solder alloys and the microstructure was seen to be quite stable upon high temperature exposure (e.g. 120°C). This is attributed to the presence of very fine dispersoid particles which impede grain boundary sliding and dislocation movement. The dispersions are seen to have a profound effect on the mechanical deformation characteristics of the solders with respect to creep. As much as three orders of magnitude reduction in the steady state creep rate has been achieved. The new solders also exhibit improved ductility under high strain rate deformation and improved strength (4–5 times higher tensile strength) at low strain rates. It is demonstrated that with a dispersion of TiO2 particles, the Pb-Sn eutectic solder with a melting point of 183°C can be made more creep-resistant than the 80Au-20Sn eutectic solder with a much higher melting point of 278°C. The new creep-resistant solders can be useful for optical and optoelectronic packaging in which dimensional stability of the assembled structure is essential.

New, creep-resistant, low melting point solders with ultrafine oxide dispersions

A tactile sensor device is disclosed that can be used for high resolution tactile sensing. The sensor may be used as a tactile shear sensor. It comprises a circuit substrate; an array of contact pads on the circuit substrate, and a set of nanowires attached to each of the contact pads. The contact pads may be isolated or formed from a matrix of interconnecting strips of material. Each set of nanowires comprises at least one and preferably a plurality of nanowires that are desirably vertically aligned and equal in length. When an object contacts at least one of the plurality of sets of nanowires, it causes at least one set of nanowires to bend and make contact along a portion of the length thereof with at least another set of nanowires. The position and movement activity of the object can be sensed by electrically interrogating pairs of contact pads to determine whether a connection has been made between them.

Tactile sensor comprising nanowires and method for making the same

The addition of small amounts of Ag (less than ~;0.5 wt. %) is found to significantly improve the ductility of the binary Bi-Sn eutectic solder. The ductility improvement, more than a threefold increase in tensile elongation, is observed even at a relatively high strain rate (0.01 s-1). As the Bi-Sn binary eutectic alloy tends to fail catastrophically by brittle fracture at high strain rates, the reduced strain-rate sensitivity in the Ag-containing alloy is beneficial for improving solder reliability on sudden impacting as might be encountered during device assembly, shipping, or thermal shock/cycling. The observed increase in alloy ductility by Ag additions is attributed to a substantial refinement of the solidification microstructure.

Sungho Jin

Papers

Article comprising enhanced nanotube emitter structure and process for fabricating article

Field emitting device comprising metallized nanostructures and method for making the same

New, creep-resistant, low melting point solders with ultrafine oxide dispersions

Tactile sensor comprising nanowires and method for making the same

Significantly improved mechanical properties of Bi-Sn solder alloys by ag-doping