Preface to the Second Edition. Preface to the First Edition. 1 Introduction. 2 Network Analysis. 2.1 Network Variables. 2.2 Scattering Parameters. 2.3 Short-Circuit Admittance Parameters. 2.4 Open-Circuit Impedance Parameters. 2.5 ABCD Parameters. 2.6 Transmission-Line Networks. 2.7 Network Connections. 2.8 Network Parameter Conversions. 2.9 Symmetrical Network Analysis. 2.10 Multiport Networks. 2.11 Equivalent and Dual Network. 2.12 Multimode Networks. 3 Basic Concepts and Theories of Filters. 3.1 Transfer Functions. 3.2 Lowpass Prototype Filters and Elements. 3.3 Frequency and Element Transformations. 3.4 Immittance Inverters. 3.5 Richards' Transformation and Kuroda Identities. 3.6 Dissipation and Unloaded Quality Factor. 4 Transmission Lines and Components. 4.1 Microstrip Lines. 4.2 Coupled Lines. 4.3 Discontinuities and Components. 4.4 Other Types of Microstrip Lines. 4.5 Coplanar Waveguide (CPW). 4.6 Slotlines. 5 Lowpass and Bandpass Filters. 5.1 Lowpass Filters. 5.2 Bandpass Filters. 6 Highpass and Bandstop Filters. 6.1 Highpass Filters. 6.2 Bandstop Filters. 7 Coupled-Resonator Circuits. 7.1 General Coupling Matrix for Coupled-Resonator Filters. 7.2 General Theory of Couplings. 7.3 General Formulation for Extracting Coupling Coefficient k. 7.4 Formulation for Extracting External Quality Factor Qe. 7.5 Numerical Examples. 7.6 General Coupling Matrix Including Source and Load. 8 CAD for Low-Cost and High-Volume Production. 8.1 Computer-Aided Design (CAD) Tools. 8.2 Computer-Aided Analysis (CAA). 8.3 Filter Synthesis by Optimization. 8.4 CAD Examples. 9 Advanced RF/Microwave Filters. 9.1 Selective Filters with a Single Pair of Transmission Zeros. 9.2 Cascaded Quadruplet (CQ) Filters. 9.3 Trisection and Cascaded Trisection (CT) Filters. 9.4 Advanced Filters with Transmission-Line Inserted Inverters. 9.5 Linear-Phase Filters. 9.6 Extracted Pole Filters. 9.7 Canonical Filters. 9.8 Multiband Filters. 10 Compact Filters and Filter Miniaturization. 10.1 Miniature Open-Loop and Hairpin Resonator Filters. 10.2 Slow-Wave Resonator Filters. 10.3 Miniature Dual-Mode Resonator Filters. 10.4 Lumped-Element Filters. 10.5 Miniature Filters Using High Dielectric-Constant Substrates. 10.6 Multilayer Filters. 11 Superconducting Filters. 11.1 High-Temperature Superconducting (HTS) Materials. 11.2 HTS Filters for Mobile Communications. 11.3 HTS Filters for Satellite Communications. 11.4 HTS Filters for Radio Astronomy and Radar. 11.5 High-Power HTS Filters. 11.6 Cryogenic Package. 12 Ultra-Wideband (UWB) Filters. 12.1 UWB Filters with Short-Circuited Stubs. 12.2 UWB-Coupled Resonator Filters. 12.3 Quasilumped Element UWB Filters. 12.4 UWB Filters Using Cascaded Miniature High- And Lowpass Filters. 12.5 UWB Filters with Notch Band(s). 13 Tunable and Reconfigurable Filters. 13.1 Tunable Combline Filters. 13.2 Tunable Open-Loop Filters without Via-Hole Grounding. 13.3 Reconfigurable Dual-Mode Bandpass Filters. 13.4 Wideband Filters with Reconfigurable Bandwidth. 13.5 Reconfigurable UWB Filters. 13.6 RF MEMS Reconfigurable Filters. 13.7 Piezoelectric Transducer Tunable Filters. 13.8 Ferroelectric Tunable Filters. Appendix: Useful Constants and Data. A.1 Physical Constants. A.2 Conductivity of Metals at 25 C (298K). A.3 Electical Resistivity rho in 10-8 m of Metals. A.4 Properties of Dielectric Substrates. Index.

Microstrip filters for RF/microwave applications

A tunable third-order combline bandpass filter using thin-film barium-strontium-titanate varactors and fabricated on a sapphire substrate is reported. Application of 0-200-V bias varied the center frequency of the filter from 2.44 to 2.88 GHz (16% tuning) while achieving a 1-dB bandwidth of 400 MHz. The insertion loss varied from 5.1 dB at zero bias to 3.3 dB at full bias, while the return loss exceeded 13 dB over the range. The third-order intercept of the filter was found to be 41 dBm.

An electronically tunable microstrip bandpass filter using thin-film Barium-Strontium-Titanate (BST) varactors

Dielectric materials are continuing to play a very important role in the microwave communication systems. These materials are key in realization of low-loss temperature-stable resonators and filters for satellite and broadcasting equipment, and in many other microwave devices. High dielectric-constant materials are critical to the miniaturization of wireless systems, both for the terminals and base-stations, as well as for handsets. In this paper, a sequential evolution of the dielectric materials applications in microwave devices will be reviewed. This includes dielectric waveguides, low-loss temperature-stable ceramic materials, dielectric resonators, and filters. The recent advances in the multilayer circuit modules, dielectric antennas, and ferroelectrics are also described.

Dielectric materials, devices, and circuits

Tunable lowpass and bandpass lumped-element filters employing barium-strontium-titanate (BST)-based capacitors are presented A new metallization technique is used, which improves the quality factor of the tunable BST capacitors by a factor of two The lowpass filter has an insertion loss of 2 dB and a tunability of 40% (120-170 MHz) with the application of 0-9 V DC bias The bandpass filter (BPF) has an insertion loss of 3 dB and a tunability of 57% (176-276 MHz) with the application of 0-6 V DC The third-order intercept point of the BPF was measured to be 19 dBm with the application of two tones around 170 MHz

Voltage-controlled RF filters employing thin-film barium-strontium-titanate tunable capacitors

Benefits of ferroelectric component applications at microwaves is discussed. Experience recently gained in the high-temperature film-production technology has been used for obtaining high-quality ferroelectric tunable components. The disk made from bulk SrTiO3 single crystal covered with double-sided YBa2Cu3Y7 films was used as a high-quality TM010 mode tunable resonator. Planar structures containing thin film ferroelectric layers: planar capacitor, sandwich capacitor, coplanar line, and fin line have been studied. Modeling dielectric response of low-temperature incipient ferroelectrics (SrTiO3, KTaO3) has been applied for simulation of tunable planar structures. The quality factor of a tunable component (QFCT) is suggested to characterize the validity of the component for practical applications. The high-quality planar capacitors are pioneered for the applications. The wide frequency band fin line phase shifter has been studied and simulated. The prospects for applications of ferroelectric planar structures at room temperature is discussed.

Ferroelectric Tuning of Planar and Bulk Microwave Devices

Small signal dielectric properties (/spl epsiv/, tan/spl delta/) of highly oriented ferroelectric SrTiO/sub 3/ and (Ba,Sr)TiO/sub 3/ films at 1 MHz, 3 GHz, 10 GHz, and 20 GHz were investigated. Microstrip resonator with tunable planar ferroelectric capacitor was the object of investigation for resonator response to elevated single tone microwave (MW) power (up to 100 W), to two-tone MW power (intermodulation distortion measurements) and to video pulse voltage. As a result, speed of resonator tuning and MW loss variation were measured. 1.9 GHz phase-shifter and 20 GHz tunable filter operating at T=300 K are presented.

Ferroelectric films: nonlinear properties and applications in microwave devices

The microwave (MW) performance of tunable stripline resonators with ferroelectric (SrTiO3 or (Ba, Sr)TiO3) planar capacitors under exposure to high voltage video pulses and MW (10 GHz) signals are studied. The resonator switching times were less than 30 nanoseconds, and these values were limited by the measurement apparatus. The dependence of film capacitance and MW loss in ferroelectric films as a function of MW signal level, and their variation during the pulse, were measured. The large signal MW dielectric constant and loss tangent varied by less than 10% with increasing MW voltage amplitude for MW field strengths up to 1 MV/m in SrTiO3 films, and 0.5 MV/m in (Ba, Sr)TiO3 films.

Response time and power handling capability of tunable microwave devices using ferroelectric films

Design of tunable Gunn diode-based active antenna module including a new type of planar dielectric resonator (PDR) tuned by a ferroelectric (FE) varactor is presented. The module is designed in such a way that the PDR acts both as a stabilizing resonator and as a radiator. Microwave properties of FE elements used for voltage-controlled oscillator (VCO) tuning are considered. The module operates at a frequency around of 17 GHz and demonstrates the radiated power of 8.8plusmn0.1 dBm over the 130-MHz tuning range and a phase-noise level of -80 dBc/Hz at 100-kHz offset. 65deg width of the radiation pattern in both the E-and H-planes corresponding to a gain of 5.1 dBi was measured. The VCO module has been tested in the regime of the frequency modulation. The output signal spectra measured and simulated for modulating bipolar voltage pulses of repetition frequency f=2 MHz are presented.

Active integrated antenna based on planar dielectric resonator with tuning ferroelectric varactor

Dielectric properties (?, tan?) of single crystal SrTiO3, (STO) films at microwave frequencies (3GHz and 10GHz) and low frequency (1MHz) were under investigation The intermodulation distortion measurements at frequency 2 GHz were carried out in microstrip resonator containing STO film planar capacitor Formulas required to choose the most suitable ferroelectric materials and to design the tunable microwave devices (filters, phiase-shifters) are derived Phase-shifter based on STO films with figure of merit 70 deg/l dB operating in the frequency range (92 - 102)GHz at T = 77 K is presented

Power handling capability of tunable microwave devices employing ferroelectric BaxSr1-xTiO3 film-based varactors: was experimentally measured and analyzed. A microstrip resonator, excited by either harmonic or two-tone microwave signals of elevated power, was selected as an example of tunable test fixture. The nonlinear distortion of the resonant curve under microwave pulsed power and generation of the third-order intermodulation distortion products in microwave resonator, using ferroelectric varactors were measured. Formulas to estimate power handling capability connected with the microwave electric field dielectric nonlinearity and the ferroelectric film overheating are derived for the tunable microwave devices based on ferroelectric films

T. B. Samoilova

Papers

Ferroelectric films: nonlinear properties and applications in microwave devices

Response time and power handling capability of tunable microwave devices using ferroelectric films

Active integrated antenna based on planar dielectric resonator with tuning ferroelectric varactor

Ferroelectric films: nonlinear properties and applications in microwave devices

Power Handling Capability of Ferroelectric Film Varactors and Tunable Microwave Devices