The technology of high‐resolution focused ion beams has advanced dramatically in the past 15 years as focusing systems have evolved from laboratory instruments producing minuscule current densities to high current density tools which have sparked an important new process: direct micromachining at the micrometer level. This development has been due primarily to the exploitation of field emission ion sources and in particular the liquid‐metal ion source. Originally developed in the early 1960’s as a byproduct of the development of electrostatic rocket engines, the liquid‐metal ion source was adapted for focused beam work in the late 1970’s, when it was demonstrated that submicrometer focused ion beams could be produced with current densities greater than 1 A cm−2. Ions can be produced with liquid‐metal ion sources from elements including Al, As, Au, B, Be, Bi, Cs, Cu, Ga, Ge, Fe, In, Li, P, Pb, Pd, Si, Sn, and Zn. In the past decade, focused ion beam systems with liquid‐metal ion sources have had a signific...

High‐resolution focused ion beams

Applications of focused ion beam microscopy to materials science specimens

Focused ion beam deposition of carbon for photomask repair

The process of ion-beam assisted deposition of tungsten and carbon by gallium ions has been studied using Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). The bulk composition of tungsten and organic deposits was found to be 70/14/15/1 W/Ga/C/O and 64.4/34/1/0.6 C/Ga/O/Si at.% respectively. The deposition of tungsten results in the formation of a stable silicide complex at the interfacial region. The process of carbon deposition occurs by free radical formation and covalent bonding of organic molecules to the surface.

http://iopscience.iop.org/article/10.1088/0953-8984/3/S/032/pdf

Focused ion-beam assisted deposition of tungsten and carbon

Microfabrication using focused ion beams

Practical results of photomask defect repair using focused ion beam (FIB) technology are presented. From Auger electron analysis, the deposited carbon film for clear defect repair contains 22% gallium, which is an element of the ion beam. Substrate damage produced by ion beam irradiation can be removed incorporating CHF3+O2 reactive ion etching. Printing results using a 5:1 stepper show that the FIB technology can be applied to photomask production.

T. Katayama

Papers

Practical results of photomask repair using focused ion beam technology