T
T. L. Hylton
Researcher at Stanford University
Publications - 10
Citations - 495
T. L. Hylton is an academic researcher from Stanford University. The author has contributed to research in topics: Thin film & Superconductivity. The author has an hindex of 6, co-authored 10 publications receiving 492 citations.
Papers
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Journal ArticleDOI
Weakly coupled grain model of high‐frequency losses in high Tc superconducting thin films
TL;DR: In this paper, a model of Josephson coupling between grains is proposed to explain the millimeter-wave surface impedance of oriented, polycrystalline thin films of high Tc superconductors.
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Resistive loss at 10 GHz in c-axis-aligned in-situ-grown YBa2Cu3O7 films.
S. S. Laderman,R. C. Taber,R. D. Jacowitz,J. L. Moll,Chang-Beom Eom,T. L. Hylton,Ann F. Marshall,T. H. Geballe,M. R. Beasley +8 more
TL;DR: The resistive losses near 10 GHz are measured at 4.2 K for ten thin films deposited on MgO substrates and it is shown that the losses in the higher-loss samples can be accounted for by the presence of small fractions of {ital c}-axis-aligned grains highly misaligned in the plane of those films.
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Millimeter-wave surface resistance measurements in highly oriented YBa2Cu
John P. Carini,A. M. Awasthi,Ward Beyermann,George Grüner,T. L. Hylton,Kookrin Char,M. R. Beasley,Aharon Kapitulnik +7 more
TL;DR: In this article, the temperature dependence of the millimeter-wave surface resistance R/sub s/(T) in two oriented polycrystalline thin-film samples of YBa/sub 2/Cu/sub 3/O/sub 7/..sqrt../sub delta was measured.
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Power-law temperature dependence of the electrodynamic properties in oriented YBa2Cu3O7- delta and Y2Ba4Cu8O16- delta films.
TL;DR: In this paper, temperature dependence of the surface resistance R{sub s} and surface reactance X{ sub s} at 148 GHz was measured for YBa2Cu3O(7-delta) and Y2Ba4Cu8O(16delta), with the c axis oriented perpendicular to the substrate.
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Growth and properties of sputtered high-T/sub c/ oxide thin films
TL;DR: In this article, the effects of composition, annealing condition, and thickness of an epitaxial film on its orientation were discussed, showing anisotropic resistivities and critical current densities that are orientation-dependent.