Taehyun Hong

TL;DR: In this paper, the authors describe the recent advances in flexible oxide thin-film transistors (TFTs), one of the rapidly emerging technologies for the next-generation display applications.

TL;DR: A review of recent research and development advances in oxide thin film transistors (TFTs) fabricated by ALD processes can be found in this paper, where an introduction to n-type oxide TFTs is provided with a focus on the development of active-layer material combinations from binary oxide active layers, like zinc oxide and indium oxide, to ternary and quaternary oxide active layer formed by doping with elements such as gallium or tin to achieve high mobility and high device stability.

TL;DR: In this article, a review of recent progress and major trends in the field of flexible oxide thin film transistors (TFTs), fabricating with atomic layer deposition (ALD) processes is presented.

TL;DR: Results indicate that the supercycle ALD technique is effective for synthesizing multicomponent oxide TFTs for electronic applications requiring high mobility and mechanical flexibility.

TL;DR: In this paper , a dual-channel formed by IZO stacked on the back channel improves both mobility and reliability of devices as the layer thickness increases, which suggests that ALD-based dual channel regulation by nanoscale thickness control of the stacking oxide semiconductor can overcome the trade-off between mobility, reliability, and reliability.