An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

A compact digital camera is formed with a lenslet array comprised of a plurality of lenslets, each lenslet has a decentration corresponding to its radial position in the lenslet array so that the axial ray of each lenslet views a different segment of a total field of view. A photosensor array comprised of a plurality of sub-groups of photodetectors is positioned such that each sub-group is located along the axial ray of a respective lenslet. A field limiting baffle comprised of at least one aperture plate is positioned such that the center of the apertures are located along the axial ray of a respective lenslet.

Compact digital camera with segmented fields of view

An active matrix display device for suppressing voltage variation ΔV due to off-operation of a gate pulse, including TFTs and picture-element electrodes, at least one of the TFTs being assigned to each picture element, and each of the TFTs having a gate electrode connected to a gate line (first gate line), and a source and a drain one of which is connected to a data line, wherein a picture-element electrode concerned is formed so as to be overlapped with the first gate line through an insulator, and also so as to be overlapped through an insulator with a gate line other than the first gate line or a wiring disposed in parallel to the first gate line.

Electro-optical device and method of driving the same

A photoelectric conversion apparatus includes a semiconductor substrate having a photoelectric conversion portion. An insulator is provided on the semiconductor substrate. The insulator has a hole corresponding to the photoelectric conversion portion. A waveguide member is provided in the hole. An in-layer lens is provided on a side of the waveguide member farther from the semiconductor substrate. A first intermediate member is provided between the waveguide member and the in-layer lens. The first intermediate member has a lower refractive index than the in-layer lens.

Photoelectric conversion apparatus

In a bi-directional shift register and a liquid crystal display device having the bi-directional shift register, the shift register further includes a dummy stage for resetting a last stage. The dummy stage is reset by a control signal of the last stage or by the output signal of the dummy stage. Therefore, power consumption and layout area may be reduced. The shift register includes a plurality of stages and two dummy stages, and two selection signals for selecting shift direction is applied to each of the stages.

Shift register, liquid crystal display device having the shift register and method of driving scan lines using the same

A liquid crystal matrix display device has a plurality of display elements arranged in an X-Y matrix pattern. Vertical transmitting lines are connected to all of the display elements of each column, and horizontal transmitting lines are connected to each of the display elements of each row. Each of the vertical lines is connected through an input switching element to an input circuit to receive a video input signal and a horizontal pulse generator provides sequential pulse signals to control terminals of the input switching elements. In order to improve the resolution without sacrifice of contrast, the vertical transmitting lines are arranged into groups of a predetermined number of such lines, and the input switching elements associated with the lines of each such group have their control electrodes coupled together to a respective output of the horizontal scanning pulse generator. The input circuit includes time-demultiplexing circuitry, for example, formed of sample/hold circuits, to present respective sampled versions of the input signal, staggered with respect to one another, to input electrodes of respective ones of the input switching devices of each of the groups.

Liquid crystal matrix display device

Solid-state image pickup apparatus, such as an MOS imager, has a two-dimensional array of picture element units each formed of a photo sensitive element and a gating element, and scanning circuits for supplying horizontal and vertical scanning pulses. The picture unit elements in turn discharge a signal charge onto vertical and horizontal transmitting lines in response to the vertical and horizontal scanning pulses. Then, a resulting signal current is used to develop an output video signal. In order to provide a strong output video signal with a good S/N ratio, a current mirror circuit, formed of an input transistor and an output transistor with first current-carrying electrodes joined together to a voltage reference point and with control electrodes joined together, amplifies the signal current. A second current-carrying electrode of the input transistor receives a constant current from a current source and also receives the signal current. The output transistor has a second current-carrying electrode connected to an output load. Another current source can be connected to the output transistor so that only AC current will flow to the output load. The output load can be a load capacitor associated with a pre-charging transistor, or can be a serial charge transfer device.

Image pickup apparatus

Solid-state image pickup apparatus, such as an MOS imager, has a two-dimensional array of picture element units each formed of a photo sensitive element and a gating element. The picture unit elements discharge a signal charge onto vertical and horizontal transmitting lines in response to vertical and horizontal scanning pulses. Then, a resulting signal current is used to develop an output video signal. In order to give the output video signal a good S/N ratio, a gain-controlled current amplifier is employed. In several embodiments, the gain-controlled amplifier includes first through fourth transistors with the base-emitter junctions of the first and second transistors and of the third and fourth transistors connected in series, with a constant current source coupled to the first transistor, controlled current sources connected to the second and third transistors, and a load device coupled to the fourth transistor. In other embodiments, the gain controlled amplifier is formed of first, second, and third current mirror circuits connected in a balanced-current arrangement. Electrically variable resistances, e.g., MOS transistors, are coupled to the output transistors of the first and second current mirror circuits to control the current gain.

Image pickup apparatus with gain controlled output amplifier

In a memory type insulated gate field effect semiconductor device including a semiconductor layer of one conductivity type, a source region of the opposite conductivity type formed in the surface of the semiconductor layer, a drain region of the opposite conductivity type formed in the surface of the semiconductor layer, a gate insulating layer affixed to the surface of the semiconductor layer, and a gate electrode deposited on the surface of the gate insulating layer, the gate insulating layer has a pair of thick gate guarding portions which exist on side of the source and drain regions, and a thin memory portion intermediate between the thick gate guarding portions, and a surface impurity concentration per square centimeter of the semiconductor layer under the thick gate guarding portions is different from a surface impurity concentration per square centimeter of the semiconductor layer under the tin memory portion. The voltage difference between the threshold voltages of the semiconductor device at the memorized state and at the non-memorized state can be increased, and the read-out voltage of the semiconductor device can be reduced. The circuit design is simplified.

Memory type insulating gate field effect semiconductor device

A pulse generating circuit comprises a first series connection of a first switching element (3:13) and a second switching element (4), a second series connection of a capacitive element (5) and a third switching element (6) coupled with a connecting point between the first and second switching elements, an amplifying element (7) having input and output terminals connected to both ends of the capacitive element (5), respectively, and a fourth switching element (8) connected to the output end of the amplifying element (7), and is supplied with a first input signal varying in level through the control terminals of the first and third switching elements (3:13, 6) and a second input signal varying in level through the control terminals of the second and fourth switching elements (4, 8), thereby to obtain a pulse having the width corresponding to the time interval from a variation in the level of the first input signal to a variation in the level of the second input signal at the output end of the amplifying element (7).

Takaji Ohtsu

Papers

Liquid crystal matrix display device

Image pickup apparatus

Image pickup apparatus with gain controlled output amplifier

Memory type insulating gate field effect semiconductor device

Large amplitude pulse generating circuits