Takao C

TL;DR: In this article, a process for producing a semiconductor substrate is provided which comprises providing a first substrate made of silicon having a porous silicon layer formed thereon by making porous the substrate silicon and a nonporous monocrystalline silicon layer epitaxially grown on the porosity silicon layer.

TL;DR: In this article, a process for preparing a semiconductor device substrate comprises a step of making at least one surface of a first substrate composed of Si material porous, oxidizing inside walls of pores in the resulting porous Si surface layer, forming a monocrystalline Si layer on the porous Si layer, and bonding the mon-coalescence Si layer to one substrate through an insulating layer therebetween.

TL;DR: In this paper, an anodization apparatus for anodizing the surface of a semiconductor substrate by supporting the substrate between a pair of electrodes in an electrolytic solution is described.

TL;DR: In this paper, a process for forming a semiconductor thin film by forming an amorphous semiconductor film on a substrate having a surface comprising an ammorphous insulating material and seed crystals arranged at desired positions, applying heat treatment and growing crystals by solid phase growth with the seed crystals as the origination points is characterized.

TL;DR: In this article, a control valve assembly for a total pressure hydraulic brake is provided with an input port (17,18), an output port (10,11), a remote control input port connected to a hydraulic fluid supply means (41), a first response member (12) which is moved together with depression of a brake pedal, a second response member(37), and a control means (3,4) which operates in accordance with the movement of either the first or the second response members (12,37).