T
Takao Nakamura
Researcher at Sumitomo Electric Industries
Publications - 129
Citations - 2373
Takao Nakamura is an academic researcher from Sumitomo Electric Industries. The author has contributed to research in topics: Layer (electronics) & Semiconductor. The author has an hindex of 21, co-authored 128 publications receiving 2282 citations.
Papers
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Journal ArticleDOI
531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {202̄1} Free-Standing GaN Substrates
Yohei Enya,Yusuke Yoshizumi,Takashi Kyono,Katsushi Akita,Masaki Ueno,Masahiro Adachi,Takamichi Sumitomo,Shinji Tokuyama,Takatoshi Ikegami,Koji Katayama,Takao Nakamura +10 more
TL;DR: In this paper, the InGaN based laser diodes (LDs) on semi-polar free-standing GaN substrates were demonstrated under pulsed operation at room temperature.
Journal ArticleDOI
Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {2021} GaN Substrates
Yusuke Yoshizumi,Masahiro Adachi,Yohei Enya,Takashi Kyono,Shinji Tokuyama,Takamichi Sumitomo,Katsushi Akita,Takatoshi Ikegami,Masaki Ueno,Koji Katayama,Takao Nakamura +10 more
TL;DR: In this paper, a room-temperature continuous-wave operation of 520 nm InGaN-based green laser diodes on semi-polar GaN substrates was demonstrated.
Journal ArticleDOI
Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
Yu Saitoh,Kazuhide Sumiyoshi,Masaya Okada,Taku Horii,Tomihito Miyazaki,Hiromu Shiomi,Masaki Ueno,Koji Katayama,Makoto Kiyama,Takao Nakamura +9 more
TL;DR: In this article, a high quality n-GaN drift-layer with an electron mobility of 930 cm2 V-1 s-1 was obtained by optimizing the growth conditions by reducing the intensity of yellow luminescence using conventional photoluminescence measurements.
Patent
Light-emitting device and manufacturing method thereof
TL;DR: In this article, a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light emitting device includes a GaN substrate and a light emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN.
Journal ArticleDOI
High-Power (over 100 mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530 nm
Shimpei Takagi,Yohei Enya,Takashi Kyono,Masahiro Adachi,Yusuke Yoshizumi,Takamichi Sumitomo,Yuichiro Yamanaka,Tetsuya Kumano,Shinji Tokuyama,Kazuhide Sumiyoshi,Nobuhiro Saga,Masaki Ueno,Koji Katayama,Takatoshi Ikegami,Takao Nakamura,Katsunori Yanashima,Hiroshi Nakajima,Kunihiko Tasai,Kaori Naganuma,Noriyuki Fuutagawa,Yoshiro Takiguchi,Tatsushi Hamaguchi,Masao Ikeda +22 more
TL;DR: In this paper, continuous-wave operation of InGaN green laser diodes (LDs) on semipolar {2021} GaN substrates with output powers of over 100 mW in the spectral region beyond 530 nm is demonstrated.