M
Masaki Ueno
Researcher at Sumitomo Electric Industries
Publications - 159
Citations - 3333
Masaki Ueno is an academic researcher from Sumitomo Electric Industries. The author has contributed to research in topics: Gallium nitride & Semiconductor. The author has an hindex of 25, co-authored 159 publications receiving 3248 citations. Previous affiliations of Masaki Ueno include Sony Broadcast & Professional Research Laboratories.
Papers
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Journal ArticleDOI
531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {202̄1} Free-Standing GaN Substrates
Yohei Enya,Yusuke Yoshizumi,Takashi Kyono,Katsushi Akita,Masaki Ueno,Masahiro Adachi,Takamichi Sumitomo,Shinji Tokuyama,Takatoshi Ikegami,Koji Katayama,Takao Nakamura +10 more
TL;DR: In this paper, the InGaN based laser diodes (LDs) on semi-polar free-standing GaN substrates were demonstrated under pulsed operation at room temperature.
Journal ArticleDOI
Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate
Kensaku Motoki,Takuji Okahisa,Naoki Matsumoto,Masato Matsushima,Hiroya Kimura,Hitoshi Kasai,Kikurou Takemoto,Koji Uematsu,Tetsuya Hirano,Masahiro Nakayama,Seiji Nakahata,Masaki Ueno,Daijirou Hara,Yoshinao Kumagai,Akinori Koukitu,Hisashi Seki +15 more
TL;DR: In this paper, a freestanding GaN substrate over 2 inches in size was successfully prepared for the first time by hydride vapor phase epitaxy (HVPE) using GaAs as a starting substrate.
Journal ArticleDOI
Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
Yu Saitoh,Kazuhide Sumiyoshi,Masaya Okada,Taku Horii,Tomihito Miyazaki,Hiromu Shiomi,Masaki Ueno,Koji Katayama,Makoto Kiyama,Takao Nakamura +9 more
TL;DR: In this article, a high quality n-GaN drift-layer with an electron mobility of 930 cm2 V-1 s-1 was obtained by optimizing the growth conditions by reducing the intensity of yellow luminescence using conventional photoluminescence measurements.
Journal ArticleDOI
Growth and characterization of freestanding GaN substrates
Kensaku Motoki,Takuji Okahisa,Seiji Nakahata,Naoki Matsumoto,Hiroya Kimura,Hitoshi Kasai,Kikurou Takemoto,Koji Uematsu,Masaki Ueno,Yoshinao Kumagai,Akinori Koukitu,Hisashi Seki +11 more
TL;DR: In this article, a freestanding GaN substrate of over 2-inch size with low dislocation density was prepared by hydride vapor phase epitaxy (HVPE) using GaAs (1.1)A as a starting substrate.
Patent
Metal organic chemical vapor deposition equipment
TL;DR: In this article, the susceptor is rotatable with the holding surface kept facing an inner portion of the flow channel, and a height of flow channel along a flow direction of the reactant gas is kept constant from a position to a position, and is monotonically decreased from the position to downstream side.